Band structure investigation of strained Si1-xGex/Si coupled quantum wells
The band structure of Si1-xGex/Si coupled quantum wells (CQW) was calculated with the 8-band k p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si0.6Ge0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20~60 while well width varies between 30~110 . Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.
Keywords: band structure, coupled quantum wells, 8-band k p method, strain effect, valence band, hole subband energy, coupling effect, nanotechnology