Keywords: silicon carbide, amorphous films, thin films, DC sputtering, Raman spectroscopy, photoluminescence, optical properties, structural properties, nanotechnology, deposition temperature
Deposition temperature effects on optical and structural properties of amorphous silicon carbide films
Hydrogenated amorphous silicon carbide thin films (a–SiC:H) were elaborated by DC magnetron sputtering technique by using 6H–SiC as target. The a–SiC:H films of 0.9–1.5 µm thicknesses were deposited at different temperatures of 250, 350, 450 and 550°C on p–type Si(100) and Corning glass 9075 substrates. The deposited films (a–SiC:H) were investigated by Infrared Spectroscopy (FTIR), spectrophotometry (UV–visible–NIR), Secondary Ion Mass Spectrometry (SIMS), and photoluminesence spectroscopy. The previous results of the FTIR measurements reveal the existence of a band located at 775 cm−1, which corresponds to Si–C stretching vibration of SiC amorphous, whereas the Si–C bonds of SiC crystalline is around 810 cm−1. The optical gap varies between 1.9 and 2.10 eV as a function of films' thicknesses and temperature. In addition, the PL spectra of the elaborated films show that the intensity increases when the deposition temperature increases.