Inderscience Publishers

Effects of fluorine implantation on polysilicon with high–k Er
2
O
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dielectrics

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This paper reports on electrical and physical characteristics of erbium oxide (Er2O3) dielectric films combined with fluorine implantation on polycrystalline silicon. It was found that high–k Er2O3 polyoxides with fluorine implantation have lower trapping rates and higher dielectric breakdown fields than as–deposited samples. Research indicates that the fluorine ion can passivate dangling and weak Si–H bonds, forming strong Si–F bonds after adequate rapid thermal annealing and resulting in superior characteristics and improved electrical stress endurance.

Keywords: fluorine implantation, polysilicon, Er2O3 dielectrics, Si–F bonds, erbium oxide, nanotechnology

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2
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