Inderscience Publishers

Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p–i–n junction

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Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire–based radial GaAs p–i–n junction. Current–voltage characteristics are shown, along with scanning photocurrent mapping.

Keywords: nanotechnology, electrical contacts, semiconductor nanowires, solar cells, radial p–i–n junctions, GaAs, gallium arsenide, nanoelectronics, energy conversion, electron beam lithography

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