Inderscience Publishers

Fabrication of finlike thin–film transistors by solution–processed zinc oxide and nanoimprint lithography

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This study addresses on the characteristics of transparent thin–film transistors, TTFTs, with finlike channels fabricated by the solution–processed ZnO and UV nanoimprint lithography. The proposed TTFTs exhibited better output drain current, ON/OFF current ratio, sub–threshold swing and field–effect mobility than that with the single channel one. The device performances with respect to line width/space (l/s) ratio of finlike channels were also studied. With this approach, the low cost and high performance TTFTs can be fabricated for future flat–panel display applications.

Keywords: zinc oxide, ZnO, transparent transistors, thin film transistors, solution process, transistor fabrication, finlike transistors, nanoimprint lithography, output drain current, ON/, OFF current ratio, sub–threshold swing, field–effect mobility, finlike channels, flat panel displays

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