Keywords: photoluminescence, silicon quantum dots, low-dimensional structures, pulsed laser ablation, metal doping, defects, local electron states, nanotechnology, nanocrystalline silicon films
Formation of photoluminescent properties inherent to silicon quantum dots
The analysis of original works devoted to preparation and investigation of nanocrystalline silicon (nc-Si) films containing Si quantum dots (QDs) that exhibit photoluminescence (PL) within the range 1.4 – 3.2 eV at room temperature is presented. Thin films were prepared by pulse laser deposition (PLD). Offered by authors doping these nc-Si films with gold in the growing process provided passivation of Si dangling bonds (DB) and some increase in the forbidden gap width of a barrier layer. Demonstrated are possibilities to explain and control stationary and kinetic characteristics of visible PL in the framework of the quantum-dimensional model as well as radiative exciton annihilation with taking into account Si nanocrystals (NCs) size distribution pronounced in PL features.