Keywords: gallium nitride, GaN nanowires, low pressure CVD, chemical vapour deposition, silicon substrate, nanoelectronics, nanotechnology, temperature, pressure
Gallium nitride nanowires grown by low pressure chemical vapour deposition on silicon substrate
In this work, the synthesis of GaN nanowires (NWs) using a low pressure chemical vapour deposition (LPCVD) system is performed. The growth of GaN nanowires via a catalyst–assisted process is carried out on silicon (Si) by reaction of metallic gallium (Ga) with ammonia (NH3) gas. The effects of temperature and pressure on the growth of GaN NWs focusing on the low pressure regime (pressure ranging from 250 mTorr to 600 mTorr) are explored. Scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy are performed to investigate the morphology and the quality of the nanowires. High growth yield of GaN NWs with small diameter (∼20 nm) was demonstrated at a temperature of 700°C and a pressure of 250 mTorr, which is faster than other growth methods.