Inderscience Publishers

Investigation of bipolar resistive switching characteristics in Si
3
N
4
–based RRAM with metal–insulator–silicon structure

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Fab–friendly Ti/Si3N4/p+–Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming–less process. In addition, self–compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi–level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.

Keywords: Si3N4, silicon nitride, RRAM, resistive RAM, random access memory, MIS structure, metal insulator silicon, forming–less, self–compliance, multi–level cell, nanoelectronics, nanotechnology, bipolar resistive switching

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3
N
4
–based RRAM with metal–insulator–silicon structure
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