Keywords: Si3N4, silicon nitride, RRAM, resistive RAM, random access memory, MIS structure, metal insulator silicon, forming–less, self–compliance, multi–level cell, nanoelectronics, nanotechnology, bipolar resistive switching
Investigation of bipolar resistive switching characteristics in Si3N4–based RRAM with metal–insulator–silicon structure
Fab–friendly Ti/Si3N4/p+–Si stacked RRAM device was fabricated. Reproducible bipolar switching occurs under a reasonable operation voltage (<3 V) owing to forming–less process. In addition, self–compliance less than 1 mA is helpful for a circuit design. For high density, the feasibility of multi–level cell (MLC) operation is demonstrated using gradual set/reset during resistance transition.