Inderscience Publishers

Investigation of Ge/Si quantum dot structures using the methods of admittance spectroscopy

0
In this paper the properties of multilayer p–i–n–structures based on Si with Ge quantum dots fabricated by molecular beam epitaxy were investigated using the method of admittance spectroscopy at temperatures from 10 K to 300 K. The results of experimental research for two types of structures are presented. The activation energies of the emission process from localised states are calculated.

Keywords: admittance spectroscopy, germanium, silicon, quantum dots, QDs, multi–layer structures, solar cells, molecular beam epitaxy, MBE, nanotechnology

Customer comments

No comments were found for Investigation of Ge/Si quantum dot structures using the methods of admittance spectroscopy. Be the first to comment!