Keywords: BAlN film, boron aluminium nitride, co–sputtering, dielectric function, spectroscopic ellipsometry, diamond substrate, optical parameters
Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry
Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co–sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.