Lucent Technologies low level oxygen removal
The increasing complexity and level of intergration in ULSI devices is requiring higher levels of water purity. A typical wafer uses between 20 to 200 separate rinsing steps. Impurities in the rinse water such as particles, high dissolved oxygen content, organic contaminants and gas bubbles can cause defects. Controlling oxide formation on the wafer surface is one of the reasons for reducing residual dissolved oxygen levels. As chip line widths continue to decrease, the quality of the water and the dissolved oxygen content becomes more critical.