Scientists at Plasma Technology demonstrate Atomic Layer Etching (ALEt) of Silicon, using advanced technology and plasma process knowledge.
Read the article in JVST by Andy Goodyear and Dr Mike Cooke, Oxford Instruments
Atomic layer etching using plasma is a cyclical etching process of gas dosing and surface bombardment that removes material layer by layer, and has the potential to remove single atomic layers.
In this newly published article in JVST, the authors consider how a conventional plasma etcher can be modified to perform this style of recipe and give results for silicon etching using a chlorine/argon plasma. The need for precise control of ion bombardment energy and gas dose is highlighted.
In the paper, our scientists describe how to achieve the precise control of ion bombardment energy and gas dose required for reliable etch results.