Inderscience Publishers

Photodetectors and solar cells with Ge/Si quantum dots parameters dependence on growth conditions

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In this paper recommendations for growth conditions necessary for achieving maximum detectivity of infrared photodetectors with quantum dots and efficiency of quantum dot solar cells are given. It is also shown that for improvement of photodetectors characteristics quantum dots should be grown at rather high temperatures, and, on the contrary, at relatively low temperatures for maximisation of solar cells efficiency.

Keywords: infrared photodetectors, detectivity, solar cells, efficiency, germanium, silicon, multi–layer structures, molecular beam epitaxy, MBE, quantum dots, QDs, nanotechnology, growth conditions, temperature

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