Keywords: SiOxNy, silicon oxynitride thin films, Fourier transform infrared spectroscopy, FTIR, nanotechnology, plasma enhanced CVD, chemical vapour deposition, PECVD, insulator materials, electronic devices, nanomaterials
Physico-chemical properties of SiOXNY thin films
The physico-chemical properties of silicon oxynitride (SiOXNY) thin films deposited by plasma enhanced chemical vapour deposition technique (PECVD) from a mixture of SiH4, NH3, N2O and N2 have been studied. The N2O flow rate was varied from 0 to 75 standard cubic centimetres per minute (sccm). When the oxygen content in the plasma is increased, the deposit composition changed from SiNx to SiOXNY. All samples have been thermally annealed in a classic furnace at different temperatures for 30 minute duration. Finally, the variations of the films chemical constitution are studied by Fourier transform infrared spectroscopy (FTIR). This analysis clearly shows the reduction of the absorption peaks related to the hydrogen atom in the silicon matrix. This layer can be largely used as insulator material for electronic device.