Inderscience Publishers

Simulation and performance analysis of superstrate Cu(In,Ga)Se 2 solar cells using nanostructured Zn 1– x V x O thin films

0

In this paper, we describe in the first step the structural, electrical and optical properties of the nanostructured Zn
1–
x

V

x

O thin films deposited on glass substrates by rf-magnetron sputtering using aerogel nanoparticles synthesised by the sol–gel method. The best properties, satisfying the role of window and buffer layers, were achieved, respectively, for the films of Zn
0.99
V
0.01
O elaborated at room temperature and Zn
0.80
V
0.20
O at 200ºC. In the second step, the nanostructured Zn
0.99
V
0.01
O and Zn
0.80
V
0.20
O layers are, respectively, proposed as alternative to the traditional (ITO) window and (CdS) buffer layers and tested numerically in Cu(In,Ga)Se
2
(CIGS) solar cell using one-dimensional AMPS-1D device simulator. The influence of physical and geometrical parameters of the
p
-type CIGS absorber layer on the performance of the superstrate SLG/(n+)Zn
0.99
V
0.01
O/(n)Zn
0.80
V
0.20
O/(p)Cu(In,Ga)Se
2
/Mo solar cell was investigated. The calculations assume fixed Zn
1–
x

V

x

O input parameters. The carrier concentration and thickness of the absorber layer were found to be a key factor, affecting the solar cell performance. On the basis of the simulation results, a short-circuit current density of about 33 mA/cm
2
has been obtained for 4 µm-CIGS solar cell using
n
-type Zn
0.80
V
0.20
O buffer layer for 100 nm thick. It is also found that a conversion efficiency of more than 19% AM 1.5 G could be expected for more than 3 µm absorber thickness and acceptor concentration varying between 2 × 10
16
and 10
17
cm
–3
. From the results obtained, we suggest the use of Zn
0.80
V
0.20
O and Zn
0.99
V
0.01
O as a buffer and window layers, respectively, to achieve high-efficiency CIGS solar cells with better photovoltaic parameters.

Keywords: superstrate structure, solar cell, Cu(In,Ga)Se 2, nanostructured Zn 1–xVxO, thin films.

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