Inderscience Publishers

Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation

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In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.

Keywords: charge transport, transistor simulation, Monte Carlo simulation, tight binding, non equilibrium green functions, Kubo approach, Landauer-Buttiker method, modelling, field effect transistors, ultra-scaled MOS devices, nanowires, carbon nanotubes, nanodevices, nanotechnology

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