Inderscience Publishers

Structure and luminescence of silicon nanocrystals embedded in SiO2

According to the International Technology Roadmap for Semiconductors, there is no manufacturable solution to address the increasing interconnection lengths in microelectronic devices. Optical interconnects are known to be a possible solution to this problem. The integration of optoelectronic components on an all Si matrix would considerably simplify the conception and fabrication of integrated optoelectronic devices and low-dimensional silicon could play a key role in this integration. Silicon nanocrystals embedded in a silicon oxide layer show many of the required properties such as intense luminescent emission, good wave-guiding properties and sufficient light amplification. The aim of this review is to state the motivation for research in nanophotonics and present the state-of-the-art of this emerging technology. We will pay particular attention to the Canadian contribution in the progress of the research towards the realisation of all-Si optoelectronics technology.

Keywords: silicon nanocrystals, nanophotonics, luminescence, silicon lasers, ion implantation, PECVD, PLD, silicon dioxide, superlattices, quantum confinement, interface states, semiconductors, silicon optoelectronics, nanotechnology

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