Inderscience Publishers

Structure and luminescence of silicon nanocrystals embedded in SiO2

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According to the International Technology Roadmap for Semiconductors, there is no manufacturable solution to address the increasing interconnection lengths in microelectronic devices. Optical interconnects are known to be a possible solution to this problem. The integration of optoelectronic components on an all Si matrix would considerably simplify the conception and fabrication of integrated optoelectronic devices and low-dimensional silicon could play a key role in this integration. Silicon nanocrystals embedded in a silicon oxide layer show many of the required properties such as intense luminescent emission, good wave-guiding properties and sufficient light amplification. The aim of this review is to state the motivation for research in nanophotonics and present the state-of-the-art of this emerging technology. We will pay particular attention to the Canadian contribution in the progress of the research towards the realisation of all-Si optoelectronics technology.

Keywords: silicon nanocrystals, nanophotonics, luminescence, silicon lasers, ion implantation, PECVD, PLD, silicon dioxide, superlattices, quantum confinement, interface states, semiconductors, silicon optoelectronics, nanotechnology

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