Inderscience Publishers

Surface polaritons in 2D macroporous silicon structures

Effects of increase in absorption of electromagnetic radiation, enhancement of photoconductivity in 2D photonic macroporous silicon were investigated. Dependence of photoconductivity on a corner of falling of electromagnetic radiation was founded out. Primary absorption of p-component of electromagnetic radiation, prevalence of absorption over reflection of light, angular dependencies of photoconductivity, as well as enhancement of the photoconductivity in comparison with monocrystalline silicon testify to formation of surface waves (surface polaritons) in illuminated macroporous silicon structures. The absolute maximum of photoconductivity was measured at distance between pores, corresponded by the maximal transfer electric components from a macropore surface in a silicon matrix. The measured value of the built-in electric field on a macropore surface achieves 106 V/cm, the effective absorption coefficient increases 10³ times, the signal of photoconductivity amplifies 30 times, and Raman scattering – up to one order of magnitude apparently monocrystalline silicon.

Keywords: surface polaritons, photonic structures, macroporous silicon, nanotechnology, electromagnetic radiation, absorption, photoconductivity, surface waves, Raman scattering

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