Keywords: amorphous ZnO, a–IGZO, HfO2, GZO, TFT, , transparence, magnetron sputtering, oxygen vacancies, flat panel displays, thin film transistors, glass substrate, transparent transistors, indium gallium zinc oxide, hafnium oxide, hafnia
The IGZO fully transparent oxide thin film transistor on glass substrate
The IGZO enhancement mode bottom gate fully transparent thin film transistors prepared on glass substrate were studied. With a–IGZO and GZO, respectively, as active layer, source/drain and gate electrode, we achieved a very high and uniform transparence of 84% in visible range (550–880 nm). Besides, all of the layers can be prepared by RF magnetron sputtering at room temperature.