Inderscience Publishers

The IGZO fully transparent oxide thin film transistor on glass substrate

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The IGZO enhancement mode bottom gate fully transparent thin film transistors prepared on glass substrate were studied. With a–IGZO and GZO, respectively, as active layer, source/drain and gate electrode, we achieved a very high and uniform transparence of 84% in visible range (550–880 nm). Besides, all of the layers can be prepared by RF magnetron sputtering at room temperature.

Keywords: amorphous ZnO, a–IGZO, HfO2, GZO, TFT, , transparence, magnetron sputtering, oxygen vacancies, flat panel displays, thin film transistors, glass substrate, transparent transistors, indium gallium zinc oxide, hafnium oxide, hafnia

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