SiClone - Model 100 - Silicon Carbide Sublimation Furnace
The SiClone 100 is designed for growing bulk semiconducting silicon carbide single crystals that can be finished into wafers up to 100 mm in diameter, using a sublimation growth technique or more generally known as PVT (Physical Vapor Transport). A solid-state induction heating unit is used to heat the crucible up to ~2600 °C.
In its initial offering, the SiClone 100 is targeted at customers who have developed their own hot zone, qualified a bulk crystal production recipe and are looking to begin volume production.
The furnace is equipped with state-of-the-art controls based on the Siemens Simatic WinAC software. The growth process is completely automated with the electronics and the human-machine interface connected to the furnace frame. Relevant process and event data is logged to a local database on each furnace and can be exported to a simple text file. This data can also be collected by an optional plant supervision system if furnaces are connected to a central server via a network interface module (e.g. via Ethernet).
- Optimized induction coil design provides consistent heat profile and desired temperature
gradient within customer’s provided hot zone
- Bottom loading design for easy handling of hot zone
- Flexibility in control to customize process recipe; temperature, profile, ramping, and gas flow
- Onsite engineering and support facilitates scalability and quicker ramp up