CETC Solar Energy Holdings Co., Ltd. products

By using high power laser beam to deliver a controlled amount of energy to a precise location, together with power diffusion to the inside of the material through heat transfer afterwards, CETC`s high precision laser beam welding system completes the welding process with the formation of specific molten pool after material being welded. This level of precision in controlling the heat input is based on the ease of adjusting the beam size and the range of methods available for precise positioning and moving the beam.

Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.