GUVV-S10SD

Features Indium Gallium Nitride Based MaterialSchottky-type PhotodiodePhotovoltaic Mode OperationHigh Responsivity & Low Dark Current Applications UV-A Lamp Monitoring Outline Diagrams and Dimensions Absolute Maximum RatingsSymbol UnitTst ?Top ?Vr, max. VRemarkStorage TemperatureUV-A SensorGUVV-S10SDParameter Min. Max.90852-40-30Operating TemperatureReverse VoltageIf,max. ?Popt ?/?Tsol ?Characteristics (at 25?)Symbol Min. Max. UnitId 1 ??Itc %/?R A/W? 240 395 ??Responsivity Curve Photocurrent along UV PowerCaution ESD can damage the device hence please avoid ESD.Parameter1 Forward CurrentTest ConditionsTyp.Optical Source Power Range 0.1 100,000within 10 sec.Photo Current Vr = 0.1 V UVA Lamp, 1?/?UVA Lamp?Notice: apply to us in the case that Optical Source Power is over 100,000?/?.Soldering Temperature 2600.076 Dark CurrentTemperature CoefficientResponsivitySpectral Detection RangeActive area1810.1 ? = 360 ?, Vr = 0 V10% of RIph0.18UVA Lamp