MiniSKiiP - Generation II (2014-07-08- Rev.03.4)

MiniSKiiP® Generation II Technical Explanations 1 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON MiniSKiiP® Generation II Technical Explanations Version 3.4 / July 2014 Musamettin Zurnaci MiniSKiiP® Generation II Technical Explanations 2 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON Table of Contents 1 Introduction .................................................................................................................................... 3 1.1 Key Features ................................................................................................................................. 3 1.2 Advantages .................................................................................................................................... 3 2 Topologies ..................................................................................................................................... 4 3 Selection Guide ............................................................................................................................. 6 3.1 600V Fast Switching Modules ....................................................................................................... 6 3.2 600V Modules with Trench IGBT ................................................................................................... 7 3.3 1200V Modules with Trench IGBT ................................................................................................. 8 3.4 1200V Modules with Trench 4 IGBT .............................................................................................. 9 3.5 1700V Modules with Trench IGBT ............................................................................................... 10 3.6 3-Level Modules .......................................................................................................................... 10 3.7 Half Bridge Modules .................................................................................................................... 10 4 MiniSKiiP® Qualification ............................................................................................................... 11 5 Storage & Shelf Life Conditions ................................................................................................... 11 6 MiniSKiiP® Contact System ......................................................................................................... 12 6.1 PCB Specification for the MiniSKiiP® Contact System ................................................................ 12 6.1.1 Conductive Layer Thickness Requirements ................................................................................ 12 6.1.2 NiAu as PCB Surface Finish ........................................................................................................ 12 6.2 PCB Design ................................................................................................................................. 12 6.2.1 Landing Pads ............................................................................................................................... 13 6.3 Spring Contact Specification ....................................................................................................... 13 6.4 Contact Resistance ...................................................................................................................... 14 6.4.1 Spring Contact Material Selection ............................................................................................... 15 6.4.2 Electromigration and Whisker Formation .................................................................................... 15 6.4.3 Qualification of Contact System .................................................................................................. 16 7 Safe Operating Area and for IGBTs ............................................................................................ 17 8 Definition and Measurement of Rth and Zth .................................................................................. 18 8.1 Measuring Thermal Resistance Rth(j-s) ......................................................................................... 18 8.2 Transient Thermal Impedance (Zth) ............................................................................................. 19 9 Specification of the Integrated Temperature Sensor ................................................................... 20 9.1 Electrical Characteristics (PTC) ................................................................................................... 20 9.2 Electrical Characteristics (NTC) .................................................................................................. 20 9.3 Electrical Isolation ........................................................................................................................ 22 10 Creepage- and Clearance distances ........................................................................................... 22 11 Laser Marking .............................................................................................................................. 24 12 RoHS Compliance ....................................................................................................................... 24 13 Bill of Materials ............................................................................................................................ 25 13.1 Pressure Lid ................................................................................................................................. 25 13.2 Housing ........................................................................................................................................ 25 13.3 Power Hybrid ............................................................................................................................... 25 14 Packing Specification ................................................................................................................... 26 14.1 Packing Box ................................................................................................................................. 26 14.2 Marking of Packing Boxes ........................................................................................................... 27 15 Type Designation System ............................................................................................................ 28 16 Caption of the Figures in the Data Sheets................................................................................... 28 16.1 Caption of Figures in the Data Sheets of “065”, “066” and “126” Modules ................................. 28 16.2 Caption of Figures in the Data Sheets of “12T4” and “176” Modules .......................................... 29 16.3 Calculation of max. DC-Current Value for “12T4” IGBTs ............................................................ 30 16.4 Internal and External Gate Resistors ........................................................................................... 30 17 Accessories ................................................................................................................................. 31 17.1 Evaluation Board MiniSKiiP® 2nd Generation ............................................................................. 31 17.1.1 Static Test Boards ....................................................................................................................... 32 17.1.2 Dynamic Test Boards .................................................................................................................. 32 17.1.3 Order Codes for Test Boards ...................................................................................................... 32 17.2 Pressure Lid ................................................................................................................................. 33 17.2.1 Order Codes for Standard Lids .................................................................................................... 33 17.2.2 Order Codes for Slim Lids ........................................................................................................... 33 17.3 Order Codes for Mechanical Samples ......................................................................................... 33 18 Disclaimer .................................................................................................................................... 34 MiniSKiiP® Generation II Technical Explanations 3 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 1 Introduction 1.1 Key Features ? 600V/650V Trench and 600V ultrafast (NPT) IGBTs ? 1200V and 1700V Trench and Trench 4 IGBTs ? SEMIKRON inverse and freewheeling diodes in CAL technology ? SEMIKRON thyristors for controlled rectifiers ? SEMIKRON rectifier diodes with high surge currents ? Four 4 different housing case sizes ? Current range 4A to 300A for power range up to 90 kW ? Comprehensive setup of circuit topologies: CIBs, sixpack, H-bridge, half bridge, 3-Level, uncontrolled/half controlled input bridges with brake chopper and custom specific modules for various applications ? Solderless and rugged spring contact technology for all power and auxiliary connections ? Fast and easy mounting with one or two screw(s) ? Full isolation and low thermal resistance due to DCB ceramic without base plate ? Integrated PTC or NTC temperature sensor Fig. 1.1: MiniSKiiP® housing sizes 1.2 Advantages Utilising the reliability of pressure contact technology the patented MiniSKiiP® is a rugged, high-integrated system including converter, inverter, brake (CIB) topologies for standard drive applications up to 90 kW motor power. An integrated temperature sensor for monitoring the heat sink temperature enables an over temperature shut down. All components integrated in one package greatly reduce handling. The reduced number of parts increases the reliability. MiniSKiiP® is using a well-approved Al2O3 DCB ceramic for achieving an isolation voltage of AC 2.5 kV per 1 min and superior thermal conductivity to the heat sink. Due to optimised current density, matched materials for high power cycling capability and pressure contact technology, MiniSKiiP® is a highly reliable, compact and cost effective power module. MiniSKiiP® Generation II Technical Explanations 4 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 2 Topologies The MiniSKiiP® product platform offers wide range circuit topologies as catalogue and custom specific types in four package sizes. Converter-Inverter-Brake (CIB), 6-pack, H-bridge, half bridge, 3-Level, uncontrolled/half controlled input bridges with brake chopper and custom specific modules are available for various applications. Following figures demonstrate a selection of available circuit topologies. 6-pack with open emitter (AC) CIB with open emitter (NAB) 6-pack with common emitter (AC) CIB with common emitter (NAB) Half controlled 3-phase input bridge with brake chopper (AHB) Uncontrolled 3-phase input bridge with brake chopper (ANB) MiniSKiiP® Generation II Technical Explanations 5 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON H-Bridge (GH) 3-Level (NPC) 3-Level (TNPC) Twin 6-pack (ACC) Half Bridge (GB) Fig. 2.1: Selected MiniSKiiP® Topologies MiniSKiiP® Generation II Technical Explanations 6 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 3 Selection Guide For drive applications, the following tables and diagrams can be used as a first indication (Fig. 3.1 – Fig. 3.11). In any case, a verification of the selection with an accurate calculation is mandatory. For an easy calculation, SEMIKRON offers a calculation tool called “SEMISEL”. It is a flexible calculation tool based on MathCad. Parameters can be adapted to a broad range of applications. SEMISEL can be found on the SEMIKRON homepage under http://www.semikron.com/service-support/semisel-simulation.html 3.1 600V Fast Switching Modules The following table (Fig. 3.1) shows the correlation between standard motor power (shaft power) and standard MiniSKiiP® under typical conditions. For the calculation parameters, please refer to Fig. 3.2. fsw(max) [kHz] < 8 8 - 12 > 12 P [kW] 1.5 2.2 3 4 5.5 7.5 11 15 SKiiP 11NAB065V1 25 4 SKiiP 12NAB065V1 20 4 SKiiP 13NAB065V1 25 12 SKiiP 14NAB065V1 17 4 SKiiP 26NAB065V1 20 SKiiP 37NAB065V1 15 SKiiP 39AC065V2 17 6 Fig. 3.1: Standard motor shaft powers and maximum switching frequencies Fig. 3.2: Mechanical power vs. switching frequency for 600V fast MiniSKiiP® modules MiniSKiiP® Generation II Technical Explanations 7 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 3.2 600V Modules with Trench IGBT The following table (Fig. 3.3) shows the correlation between standard motor power (shaft power) and standard MiniSKiiP® under typical conditions. For the calculation parameters, please refer to Fig. 3.4). fsw(max) [kHz] < 8 8 - 12 > 12 P [kW] 1.5 2.2 3 4 5.5 7.5 11 15 SKiiP 11NAB066V1 20 10 SKiiP 12NAB066V1 20 7 SKiiP 13NAB066V1 14 SKiiP 14NAB066V1 17 5.5 SKiiP 25NAB066V1 20 10 SKiiP 26NAB066V1 19 7 SKiiP 27AC066V1 17 5 SKiiP 28AC066V1 20 9 Fig. 3.3: Standard motor shaft powers and maximum switching frequencies Fig. 3.4: Mechanical power vs. switching frequency for 600V MiniSKiiP® modules MiniSKiiP® Generation II Technical Explanations 8 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 3.3 1200V Modules with Trench IGBT The following table (Fig. 3.5) shows for which standard motor power (shaft power) which standard MiniSKiiP® works proper under typical conditions and switching frequencies. For the calculation parameters, please refer to Fig. 3.6. fsw(max) [kHz] < 8 8 - 12 > 12 P [kW] 2.2 3 4 5.5 7.5 11 15 18.5 22 30 SKiiP 11AC126V1 19 12 7 SKiiP 12AC126V1 16 9 6 SKiiP 13AC126V1 16 10 7 SKiiP 24AC126V1 19 13 7 SKiiP 25AC126V1 16 10 6 SKiiP 26AC126V1 17 11 7 4 SKiiP 37AC126V2 17 11 7 5 SKiiP 38AC126V2 18 12 8 6 5 SKiiP 39AC126V2 19 13 9 7 6 Fig. 3.5: Standard motor shaft powers and maximum switching frequencies Fig. 3.6: Mechanical power vs. switching frequency for 1200V MiniSKiiP® modules MiniSKiiP® Generation II Technical Explanations 9 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 3.4 1200V Modules with Trench 4 IGBT The following table (Fig. 3.7) shows for which standard motor power (shaft power) which standard MiniSKiiP® works proper under typical conditions and switching frequencies. For the calculation parameters, please refer to Fig. 3.8. fsw(max) [kHz] < 8 8 - 12 > 12 P [kW] 2.2 3 4 5.5 7.5 11 15 18.5 22 30 SKiiP 11AC12T4V1 20 18 9 SKiiP 12AC12T4V1 20 17 9 SKiiP 13AC12T4V1 18 11 6 SKiiP 23AC12T4V1 4 SKiiP 24AC12T4V1 20 16 7 SKiiP 25AC12T4V1 17 9 4 SKiiP 26AC12T4V1 18 10 6 SKiiP 37AC12T4V1 14 8 5 SKiiP 38AC12T4V1 17 11 7 6 SKiiP 39AC12T4V1 13 10 8 4 Fig. 3.7: Standard motor shaft powers and maximum switching frequencies Fig. 3.8: Mechanical power vs. switching frequency for 1200V MiniSKiiP® modules with Trench 4 IGBT MiniSKiiP® Generation II Technical Explanations 10 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 3.5 1700V Modules with Trench IGBT The following table shows the portfolio of 1700V MiniSKiiP® power modules for applications up to 690V AC line voltage. Type designation VCES in V Ic,nom in A Topology Housing size SKiiP 28ANB18V3 1700 100 3-phase bridge rectifier +brake chopper MiniSKiiP 2 SKiiP 38AC176V2 1700 100 6-pack MiniSKiiP 3 SKiiP 24NAB176V1 1700 58 CIB MiniSKiiP 2 SKiiP 34NAB176V3 1700 58 CIB MiniSKiiP 3 Fig. 3.9: MiniSKiiP® 1700V modules 3.6 3-Level Modules The following table shows the portfolio of MiniSKiiP® power modules for 3-Level applications. Blocking voltage values are referred to single switch value. The total blocking voltage in NPC module is 1300V since two IGBTs are always operating in series. Type designation VCES in V Ic,nom in A Topology Housing size SKiiP 26MLI07E3V1 650 75 NPC MiniSKiiP 2 SKiiP 27MLI07E3V1 650 100 NPC MiniSKiiP 2 SKiiP 28MLI07E3V1 650 150 NPC MiniSKiiP 2 SKiiP 39MLI07E3V1 650 200 NPC MiniSKiiP 3 SKiiP 28TMLI12F4V1 1200V 80 TNPC MiniSKiiP 2 SKiiP 39TMLI12T4V2 1200V 200 TNPC MiniSKiiP 3 Fig. 3.10: MiniSKiiP® 3-Level modules with NPC or TNPC topology 3.7 Half Bridge Modules The following table shows the portfolio of MiniSKiiP® half bridge power modules. For detailed info please refer to Technical Explanations for MiniSKiiP Dual product series. Type designation VCES in V Ic,nom in A Topology Housing size SKiiP 24GB07E3V1 650 150 Half bridge (GB) MiniSKiiP 2 SKiiP 26GB07E3V1 650 200 Half bridge (GB) MiniSKiiP 2 SKiiP 38GB07E3V1 650 300 Half bridge (GB) MiniSKiiP 3 SKiiP 24GB12T4V1 1200 150 Half bridge (GB) MiniSKiiP 2 SKiiP 26GB12T4V1 1200 200 Half bridge (GB) MiniSKiiP 2 SKiiP 38GB12E4V1 1200 300 Half bridge (GB) MiniSKiiP 3 SKiiP 22GB17E4V1 1700 100 Half bridge (GB) MiniSKiiP 2 SKiiP 24GB17E4V1 1700 150 Half bridge (GB) MiniSKiiP 2 SKiiP 36GB17E4V1 1700 200 Half bridge (GB) MiniSKiiP 3 SKiiP 38GB17E4V1 1700 300 Half bridge (GB) MiniSKiiP 3 Fig. 3.11: MiniSKiiP® half bridge power modules MiniSKiiP® Generation II Technical Explanations 11 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 4 MiniSKiiP® Qualification Standard tests for the product qualification and requalification. The objectives of reliability tests are: 1. To ensure general product quality and reliability 2. To establish the limits of systems by exposing them to various test conditions 3. To ensure process stability and reproducibility of production processes 4. To evaluate the impact of product and process changes on reliability The following standard tests are minimum requirements for the product release of power modules. Standard test conditions for: Reliability Test MOS/IGBT Products Diode/Thyristor Products High Temperature Reverse Bias (HTRB) IEC 60747, DIN IEC 60749-23 1,000 h, VDS/VCE = 95% of voltage class, 125°C = Tc = 145°C 1,000 h, DC, VD/VR = 66% of voltage class, 105°C = Tc = 120°C High Temperature Gate Bias (HTGB) IEC 60747, DIN IEC 60749-23 1,000 h, ±VGS(max)/VGE(max), Tj(max) not applicable High Humidity High Temperature High Voltage Reverse Bias (H3TRB) IEC 60068-2-67 504 h, 85°C, 85% RH, VDS/VCE = 80% of voltage class, VGE = 0 V 504 h, 85°C, 85% RH, VD/VR = 66% of voltage class High Temperature Storage (HTS) IEC 60068-2-2 Test B 1,000 h, Tstg(max) 1,000 h, Tstg(max) Low Temperature Storage (LTS) IEC 60068-2-1 1,000 h, Tstg(min) 1,000 h, Tstg(min) Thermal Shock (TS) IEC 60068-2-14 Test Na 100 cycles, Tstg(max) – Tstg(min) 100 cycles Tstg(max) – Tstg(min) Power Cycling (PC) IEC 60749-34 20,000 load cycles, ?Tj = 100 K 10,000 load cycles, ?Tj = 100 K Vibration IEC 60068-2-6 Test Fc Sinusoidal sweep, 5 g, 2 h per axis (x, y, z) Sinusoidal sweep, 5g, 2 h per axis (x, y, z) Mechanical Shock IEC 60068-2-27 Test Ea Half sine pulse, 30 g, 3 times each direction (±x, ±y, ±z) Half sine pulse, 30g, 3 times each direction (±x, ±y, ±z) Fig. 4.1: Overview of SEMIKRON reliability tests, test conditions and relevant standards 5 Storage & Shelf Life Conditions MiniSKiiP power modules are qualified according to IEC 60721-4-1 and can be stored in original package for 2 years under climatic class 1K2 (IEC 60721-3-1): Relative humidity: 5%...85% Storage temperature: 5°C…40°C According to our experiences, following shelf life conditions (which are not tested) are possible and should not be exceeded: Relative humidity: max. 85% Storage temperature: -25°C…+60°C Condensation: not allowed at any time Storage time: max. 2 years MiniSKiiP® Generation II Technical Explanations 12 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON After extreme humidity the reverse current limits may be exceeded but do not degrade the performance of the MiniSKiiP®. 6 MiniSKiiP® Contact System 6.1 PCB Specification for the MiniSKiiP® Contact System The material combination between the MiniSKiiP® spring surface and the corresponding contact pad surface of the PCB has an influence to the contact resistance for different currents. Tin Lead alloy (SnPb) is an approved interface for application with MiniSKiiP® modules. A sufficient plating thickness has to be ensured according to PCB manufacturing process. In order to comply with RoHS rules, the use of following PCB finish materials are recommended: ? Nickel Gold flash (NiAu) ? Hot Air Levelling Tin (HAL Sn) ? Chemical Tin (Chem.l Sn) It is not recommended to use boards with OSP (organic solderability preservatives) passivation. OSP is not suitable to guarantee a long term corrosion free contact. The OSP passivation is dissapearing nearly 100% after a solder process or after 6 month storage. 6.1.1 Conductive Layer Thickness Requirements No special requirements on the thickness of the tin layer are necessary. All standard HAL and chemical tin boards (lead free process) are suitable. Due to PCB production process variations and several reflow processes it may be possible, that the tin layer has been consumed by the growth of inter metallic phases when mounting the MiniSKiiP®. For the functionality of the MiniSKiiP® spring contact system inside the specification limits a tin layer over the inter metallic phase is not necessary. The inter metallic phase is protecting the copper area on the PCB as well against oxidation as a long term effect. 6.1.2 NiAu as PCB Surface Finish The material combination NiAu and Ag plated spring has the best contact capabilities. To ensure the functionality of the Ni diffusion barrier, a thickness of at least 5µm nickel under plating is required. 6.2 PCB Design PCB Design is in responsibility of the customer. SEMIKRON’s recommendation is to comply with valid applicable regulations. In order to achieve the best performance layout the DC link should be a low inductance design. The –DC / +DC and –B/+B conductors should be as coplanar as possible with the maximum possible amount of copper area. The gate and the corresponding emitter tracks should be routed as well parallel and close together. If using the “standard (space) lid” a possibility is given for using SMD devices under the lid in certain areas. The maximum height of the applicable SMD devices is 3.5mm. Please make sure that the devices do not conflict either with the pressure points or with the mounting domes of the MiniSKiiP® / MiniSKiiP® lid. This will lead to an incorrect mounting increasing the thermal resistance which may lead to a thermal failure. As material for the printed circuit board, the FR 4 material can be applied. The thickness of copper layers should comply with IEC 326-3. MiniSKiiP® Generation II Technical Explanations 13 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 6.2.1 Landing Pads The landing pads for the spring contact should be free of any contamination like of solder stop, solder flux, dust, sweat, oil or other substances. If electrical components have to be soldered to the bottom side of the PCB the contact pads have to be covered during the soldering process to protect the landing pads from solder splashes. Size and position of the particular landing pads are specified in the dedicated datasheet for each type. To ensure a reliable contact the landing pad size should be not undercut those measures. The landing pads must be free from plated-through holes (“VIAs”), to prevent any deterioration on a proper contact. In the remaining area, VIAs can be placed freely. 6.3 Spring Contact Specification Material: K88 Passivation: Silver Abrasiveness approximately 75 to 95HV, thickness 3 to 5µm on the head and heel. Metallic Tarnishing protection (50 to 55%Cu, 30 to 35% Sn, 13 to 17% Zn) thickness < 0.1µm The base material K88 is a high-performance alloy for connector applications developed by Wieland Werke and Olin Brass. This alloy offers high yield strenght (550 MPa), very good formability up to sharp bending, outstanding electrical conductivity (80% IACS) as well as remarkable relaxation resistance up to 200°C for a long term stable spring force over the specified temperature range. No spring fatigue expected over the complete MiniSKiiP® lifetime. To protect the silver surface from deterioration it is covered with a silver passivation film. This tarnish protection of the MiniSKiiP spring pins is for cosmetic reasons only and protects the silver surface from sulfuration and tarnishing for about half a year. Approximately half a year after production, depending on the thickness of the tarnish protection, the silver springs can begin to decolourize. It is possible that the springs of a single module show different states of discolouration. Fig. 6.1: Two examples for discoloured spring surfaces The yellow marks (Fig. 6.1) are caused by thin sulphide layers that develop on silver plated surfaces over time. The tarnish layers are ultrathin and brittle. These sulphide layers are easily broken during mounting; they do not impair the electrical contact. Therefore, MiniSKiiP modules with discoloured springs due to oxidation and sulfuration can be used for inverter production without any risk. MiniSKiiP® Generation II Technical Explanations 14 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 6.4 Contact Resistance The total ohmic resistance of the current path through the MiniSKiiP power module consists of several elements described in table and drawing below. Note: The total ohmic resistance between the PCB terminals “1” and “2” is not the sum of values stated in the table. The trace resistances of PCB and DBC must be considered additionally. Resistance Value Explanation RC11 0.75 m? Contact resistance between spring and PCB landing pad RS1 1.5 m? Ohmic resistance of spring RC12 0.75 m? Contact resistance between spring and DBC landing pad RC21 0.75 m? Contact resistance between spring and DBC landing pad RS2 1.5 m? Ohmic resistance of spring RC22 0.75 m? Contact resistance between spring and PCB landing pad Fig. 6.2: Elements of contact resistance PCBAl2O3CuRc11 Rc21Rc12 Rc22DBCCuContact spring, K88, Ag platedRs1 Rs2Contact spring,K88, Ag platedSnPb SnPb1 2Al Fig. 6.3: Spring and contact resistances To ensure a proper contact after mounting the measure for the spring looking out of the housing is set to min. 0.9mm (measured from the top surface to the head of the spring, Fig 6.2). For a proper functionality the spring contacts must not be contaminated by oil, sweat or other substances. Do not touch the spring surface with bare fingers. For this reason SEMIKRON recommends to wear gloves during all handling of the MiniSKiiP® modules. Do not use any contact spray or other chemicals on the spring. Fig. 6.4: Spring excess length min. 0.9mm MiniSKiiP® Generation II Technical Explanations 15 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 6.4.1 Spring Contact Material Selection Ag is the only material suitable to use for all recommended PCB surfaces (NiAu, HAL Sn, chem. Sn and PbSn) without any issues. Au and Sn is not recommended to use as partners in a contact system because of contact corrosion. Due to the huge difference (1.5V) of Au and Sn in the electric potential the Sn gets dissolved and forms corrosion products. 6.4.2 Electromigration and Whisker Formation To exclude the risk of Electromigration SEMIKRON has performed a corrosive atmosphere test with a high concentration on H2S. The test was successfully passed, please see test conditions below: Pre-conditioning 48 hours 25°C 75% Relative Humidity 80V Bias Voltage Corrosive Atmosphere test following the pre-conditioning 240 hours 25°C 75% Relative Humidity 10ppm H2S 80V Bias Voltage Failure criteria Leakage current > 10µA Whiskers are electrically conductive, crystalline structures growing out of a metal surface, generated by compressive stresses present in the metal structure and accelerated upon exposure to a corrosive atmosphere. After testing whisker growth has been observed on the edges of the MiniSKiiP® springs in the area of less thick plating on the spring head and in the spring shafts. In no case whisker growth is influencing the creepage and clearance distances at MiniSKiiP®. Spring shafts are non-conductive and made of plastic. Therefore, no issue can arise with the formation of whiskers in the spring shafts. Whisker growth on the spring head is not critical as well because the whisker is connecting spring pad and spring, which is anyway connected. No whisker growth sideways could be found in between connecting pads with different potentials. The inability of whisker growth sideways is stated as well in the common literature like: Chudnovsky, “Degradation of Power Contact in Industrial Atmosphere: Silver Corrosion and Whiskers” MiniSKiiP® Generation II Technical Explanations 16 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 6.4.3 Qualification of Contact System Pre test Printed Circuit Board Kind of Test Conditions Evaluation 1 Delivery condition - - Analysis of material compositions: Surface and cross section EDX/SEM 2 After Accelerated Aging Test High Humidity, High Temperature Storage 85°C 85% RH 1000h Analysis of material compositions: Surface and cross section EDX/SEM 3 After Accelerated Aging Test High Temperature Storage 150°C 1000h Analysis of material compositions: Surface and cross section EDX/SEM Pressure Contact System Complete assembly: Mechanical Samples mounted with PCBs to a heat sink Kind of Test Conditions Evaluation 4 High Temperature Storage 125°C 1000h Measurement of electrical contact resistance before and after the test 5 High Humidity, High Temperature Storage 85°C 85% RH 1000h Measurement of electrical contact resistance before and after the test 6 Temperature Cycling with Current - 40…+125°C 200 cycles Continuous monitoring of contact resistance for: Load current 6A Sense current 1mA 7 Industrial Atmosphere in dependence upon IEC 60068-2-60 H2S 0.4ppm, SO2 0.4ppm, NO2 0.5ppm, Cl2 0.1ppm, 21Days Measurement of electrical contact resistance before and after the test 8 Vibration Sinusoidal sweep, 5 g, x, y, z – axis, 2 h/axis Continuous monitoring of electrical contact 9 Shock Half sine pulse, 30g, ±x, ±y, ±z – direction, 2h/axis Continuous monitoring of electrical contact Fig. 6.5: Overview of MiniSKiiP contact system qualification tests for reliability MiniSKiiP® Generation II Technical Explanations 17 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 0246810120 0,2 0,4 0,6 0,8 1 1,2 1,4 VCE/VCES Icsc/IcSOA_MiniSKiiP.xls-SCSOATj = 150 °CVGE = ± 15 Vtsc = 10 µsdi/dt = 2500 A/µs7 Safe Operating Area and for IGBTs Safe Operating Areas are not included in the datasheets. They are given as standardized figures and apply to 600 V and 1200 V. IGBT modules must not be used in linear mode. The number of short circuits may not exceed 1000. The time between short circuits must be > 1 s. Maximum pulse duration 10µs (6µs at 600V Trench). For Trench 4 IGBTs (1200V “12T4”) the maximum pulse duration =10µs @ VDC-Link = 800V. IC = ICnom (chip current rating) Fig. 7.1: Safe Operating Area (SOA) Fig. 7.2: Short Circuit Safe Operating Area (SCSOA) The maximum VCES value must never be exceeded. Due to the internal stray inductance of the module, a small voltage will be induced during switching. The maximum voltage at the terminals VCEmax,T must therefore be smaller than VCEmax (see dotted line in Fig. 7.1). 0 0,2 0,4 0,6 0,8 1 1,2 0 0,2 0,4 0,6 0,8 1 1,2 1,4 V CE /V CES I C,pulse / I CRM T c = 25 °C T j = 150 °C SOA-MiniSKiiP.xls MiniSKiiP® Generation II Technical Explanations 18 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 8 Definition and Measurement of Rth and Zth 8.1 Measuring Thermal Resistance Rth(j-s) The thermal resistance is defined as given in the following equation: ? ?V21V21thPTTP?TR???? (8-1) The data sheet values for the thermal resistances are based on measured values. As can be seen in equation (8-1), the temperature difference ?T has a major influence on the Rth value. As a result, the reference point and the measurement method have a major influence, too. 2 mmThermal greaseHeatsinkNo copper baseplateDBC substrateReference point Tj(junction),silicon chip, hot spotReference point Ts (heat sink) Fig. 8.1: Mesaurement set up Since MiniSKiiP® modules have no base plate, SEMIKRON gives the thermal resistance between the junction and the heat sink Rth(j-s). This value depends largely on the thermal paste. Thus, the value is given as a “typical” value in the data sheets. The Rth(j-s) of the MiniSKiiP® module is measured on the basis of the reference points given in Fig. 8.1. The reference points are as follows: ? Tj - The junction temperature of the chip ? Ts – The heat sink temperature is measured in a drill hole, 2 mm beneath the module, directly under the chip. The 2 mm is derived from our experience, which has shown that at this distance from the DBC ceramic, parasitic effects resulting from heat sink parameters (size, thermal conductivity etc.) are at a minimum and the disturbance induced by the thermocouple itself is negligible. For further information on the measurement of thermal resistances, please refer to: ? M. Freyberg, U. Scheuermann, “Measuring Thermal Resistance of Power Modules “; PCIM Europe, May, 2003 The given Rth values can be used for a standard thermal design. For a more detailed and more accurate thermal design it is important to create a dynamic thermal model of the heatsink taking in consideration the chip positions. MiniSKiiP® Generation II Technical Explanations 19 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 8.2 Transient Thermal Impedance (Zth) When switching on a “cold” module, the thermal resistance Rth appears smaller than the static value as given in the data sheets. This phenomenon occurs due to the internal thermal capacities of the package. These thermal capacities are “uncharged” and will be charged with the heating energy resulting from the losses during operation. In the course of this charging process the Rth value seems to increase. During this time it is therefore called transient thermal impedance Zth. When all thermal capacities are charged and the heating energy has to be emitted to the ambience, the transient thermal resistance Zth will have reached the static data sheet value Rth. 0,00010,0010,010,11100,00001 0,0001 0,001 0,01 0,1 1[s]Zth(j-c)/Rth(j-s) tP Fig. 8.2: Zth: Transient thermal impedance The transient thermal behaviour is measured during SEMIKRON’s module approval process. Based on this measurement a mathematical model is derived, resulting in the following equation ? ????????????????????????????????????????????????? 3tte13R2tte12R1tte11R t thZ (8-2) For MiniSKiiP® modules, the coefficients R1, t1, and R2, t2 can be determined using the data sheet values as given in Fig. 8.3. Parameter Unit IGBT, CAL diode R1 [K/W] 0.11 x Rth(j-s) R2 [K/W] 0.77 x Rth(j-s) R3 [K/W] 0.12 x Rth(j-s) t1 [sec] 1.0 t2 [sec] 0.13 t3 [sec] 0.002 Fig. 8.3: Parameters for Zth(j-s) calculation using equation (8-2) MiniSKiiP® Generation II Technical Explanations 20 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 9 Specification of the Integrated Temperature Sensor Please note that MiniSKiiP® power modules are equipped with NTC or PTC temperature sensors. To get the detailed info about type of temperature sensor please refer to module data sheet. 9.1 Electrical Characteristics (PTC) The type “SKCS2 Temp 100” does have a characteristic like a resistance with positive temperature coefficient (PTC) – see Fig. 9.1 .Due to isolation and space reasons the temperature sensor is placed near the edge of the DBC but in close to an IGBT switch. The thermal coupling is not efficient enough to monitor the chip temperature of the switch. The sensor can be used as an indicator for the DBC temperature. Note: Thermal coupling diminished if water-cooling is used 02505007501000125015001750200022502500-50 -25 0 25 50 75 100 125 150 175Temperature [°C]Resistance [Ohm] Fig. 9.1: Temperature sensor ”SKCS2 Temp 100“:Resistance as a function of temperature (typical characteristic) The temperature sensor has a nominal resistance of 1000 ? at 25°C with a typical temperature coefficient of 0.76 % / K. Sensor resistance R(T) as a function of temperature: R(T) = 1000 ? * [1 + A * (T - 25 °C) + B * (T - 25 °C)² ] with A = 7.635 * 10-3 °C-1 and B = 1.731 * 10-5 °C-2 At 25°C the measuring tolerance is max. ? 3 %, at 100°C max. ? 2 %. SEMIKRON recommends a measuring current range of 1 mA = Im = 3 mA. For realising a trip level by an additional protection network the recommended value for the trip temperature is about 115 °C (air cooling), based on a heat sink with a standard thermal lateral spread. 9.2 Electrical Characteristics (NTC) Selected MiniSKiiP® power modules are equipped with sensor type “KG3B” which has a NTC characteristic – see Fig. 9.2 . The sensor can only be used as an indicator for the DBC and heat sink temperature. In combination with a monitoring circuit the temperature sensor can protect against over-temperature. The temperature sensor has a nominal resistance of 5000 O at 25°C (298.15 K). Following table and diagram show its characteristics. MiniSKiiP® Generation II Technical Explanations 21 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 0110100-40-30-20-10 0102030405060708090100110120130140150R [kO]T [°C]R(T)R(typ.) R(min.) R(max.) Fig. 9.2: Typical sensor resistance R(T) as a function of temperature (NTC) Temperature [°C] Temperature [°F] R (min.) [kO] R (typ.) [kO] R (max.) [kO] -40 -40 83.9 99.0 116.6 -30 -22 49.4 57.5 66.9 -20 -4 30.0 34.6 39.7 -10 14 18. 21.5 24.4 0 32 1 .2 13.7 15.4 10 50 8.04 9.00 10.0 20 68 5.45 6.05 6.69 25 77 4.53 5.00 5.50 3 86 3.78 4.15 4.56 40 04 2.67 2.91 .17 50 122 1.92 2.08 2.25 60 140 1.41 1.51 1.63 70 158 1.05 1.12 1.20 80 176 0.789 0.840 0.891 90 194 0.604 0.639 0.675 100 212 0.468 0.493 0.518 110 230 0.364 0.385 0.406 120 248 0.286 0.304 0.322 130 266 0.227 0.243 0.259 140 284 0.183 0.196 0.209 150 302 0.148 0.159 0.171 Fig. 9.3: Sensor resistance values for selected temperatures MiniSKiiP® Generation II Technical Explanations 22 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 9.3 Electrical Isolation Inside the MiniSKiiP® the temperature sensor is mounted close to the IGBT- and diode dice on the same substrate. The minimum distance between the copper conductors is = 0.71 mm (Fig. 9.4). Fig. 9.4: Temperature sensor on DBC substrate Since the MiniSKiiP® module is filled with silicon gel for isolation purposes, the design requirements for the specified isolation voltage (AC 2.5 kV for 1 min) are met (exception: the temperature sensor of some MiniSKiiP® 0 types has no basic insulation. The maximum potential differences are given in the data sheets. The isolation is 100 % end tested on all parts. Fig. 9.5: Sketch of high energy plasma caused by melted off bond wire During short circuit failure and therewith electrical overstress, the bond wires can melt off producing an arc with high energy plasma (Fig. 9.3). In this case, the direction of plasma expansion is not predictable; the temperature sensor might be touched by plasma and exposed to a high voltage level. The safety grade "Safe electrical Isolation" according to EN 50178 can be achieved by different additional means, described there in detail. 10 Creepage- and Clearance distances The pressure lid of MiniSKiiP® is designed as a hybrid construction with a metal inlay. The mounting screw is electrically connected with the metal inlay and the heat sink. Since the pressure lid has the same electrical potential as the heat sink creepage - and clearance distance considerations are required. Due to the design, only creepage distances are relevant. The distance between the metal inlay of the lid and the printed circuit board (Fig. 10.1, 1.) are > 8.1 mm as given in Fig. 10.2. The internal distance between screw and board (Fig. 10.1, 2.) is > 8.5 mm, as given in Fig. 10.3. Inside the MiniSKiiP® a transparent silicone gel with a dielectric strength of 23 kV/mm ensures electrical isolation from the DBC substrate to the heat sink (Fig. 10.1, 3.) as well as from the DBC to the screw (Fig. 10.1, 4.). = 0.71 mm MiniSKiiP® Generation II Technical Explanations 23 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON Fig. 10.1: Cross section picture of MiniSKiiP® shows, where the distances are examined. Fig. 10.2: Cross section sketch with distance from pressure plate to PCB Fig. 10.3: Cross section sketch with distance from screw to PCB > 8.5 mm > 8.1 mm 1. 3. 2. 4. MiniSKiiP® Generation II Technical Explanations 24 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 11 Laser Marking All MiniSKiiP® modules are laser marked. The marking contains the following items (see Fig. 11.1): Fig. 11.1: Laser marking of MiniSKiiP® module 1. SEMIKRON logo 2. Type designation 3. SEMIKRON part number 4. Date code – 5 digits: YYWWL (L=Lot of same type per week) 5. “R” Identification for compliance with RoHS 6. Data Matrix Code The Data Matrix Code is described as follows: ? type: EEC 200 ? standard: ISO / IEC 16022 ? cell size: 0.46 mm ? field size: 24 x 24 ? dimension: 11 x 11 mm plus a guard zone of 1 mm (circulating) ? the following data is coded: ? ? ? ? ? ? ? ? ? ?SKiiP23NAB126V1 25120060 4DE0500001 0 2 0001 04050 ? 16 digits type designation ? 1 digit blank? 10 digits part number ? 12 digits production tracking number? 1 digit blank ? 1 digit measurement number? 1 digits line identifier (production) ? 1 digit blank? 4 digits continuous number ? 1 digit blank5 digits datecodeTotal: 53 digits 12 RoHS Compliance RoHS: The Restriction of Hazardous Substances in Electrical and Electronic Equipment (RoHS) Directive (2002/95/EC) MiniSKiiP® 1) is in compliance with the RoHS Directive (2002/95/EC). Newer MiniSKiiP®1) modules are marked with “R” behind the date code to show the compliance with RoHS in the laser marking as well (Fig 11.1, 5.) 1 Not valid for MiniSKiiP® size 8 modules including current sensors (“I” types) with date code earlier than 0601 1. 2. 3. 4. 6. R 5. MiniSKiiP® Generation II Technical Explanations 25 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 13 Bill of Materials Fig. 13.1: MiniSKiiP® power module components 13.1 Pressure Lid Standard pressure lid: Steel plate: St 52.3 - 3G - 0,3 (DIN 1623 T2), zinc plated Plastic part: “Ryton PPS BR 111 black” (PPS + 60-65% glass fibre, does not contain any free halogens) Slim pressure lid: Steel plate: St 52.3 - 3G - 0,3 (DIN 1623 T2), zinc plated Plastic part: “Noryl VO 2570-38031” 13.2 Housing Housing: “Noryl V0 2570- 8303” (PPE + PA + 30% glass fibre, halogen free according to DIN/VDE 0472, part 815) Contact springs: Copper alloy “K88”, Ag plated (abrasiveness approx. 75 to 96 HV); metallic passivation Soft gel: Silicone gel “Silopren 103” 13.3 Power Hybrid Substrate: Three layer –Copper (0.3mm), Al2O3 (0.38mm), Copper (0.3mm), NiAu flash Wire bonds: Aluminum alloy Chips, T-Sensor: Silicon with Aluminum metallization top side and silver metallization bottom side (lead free) Chip solder: SnAg solder + organic flux (cleaned after soldering) Note: MiniSKiiP® is a lead free product according to the EU directives 2000/53/EG and 2002/95/EG and therefore in compliance with the RoHS directive (see chapter 10) Pressure Lid Housing Power Hybrid MiniSKiiP® Generation II Technical Explanations 26 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 14 Packing Specification 14.1 Packing Box Standard packing boxes for MiniSKiiP® Modules: Fig. 14.1: Outer cardboard box, dimensions: 600 x 400 x 100 mm³ (l x w x h) Fig. 14.2: Antistatic tray, dimensions: 440 x 275 x 30 mm³ Fig. 14.3: Card board box with pressure lids, dimensions: 150 x 130 x 95 mm³ Quantities per package: MiniSKiiP® 0 3 trays with 66 modules = 198 pcs (? 8.0 kg) MiniSKiiP® 1 3 trays with 40 modules = 120 pcs (? 8.5 kg) MiniSKiiP® 2 3 trays with 24 modules = 72 pcs (? 9.5 kg) MiniSKiiP® 3 3 trays with 16 modules = 48 pcs (? 9.8 kg) Bill of materials: Boxes: Paper (card board) Trays: A-PET (not electrically chargeable) Dry Pack: Activated and grained clay in paper bags Cover tray on top Bottom tray with modules Three additional card board boxes with pressure lids included in the outer box Three layers of antistatic trays with MiniSKiiP 600 mm 400 mm MiniSKiiP® Generation II Technical Explanations 27 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 14.2 Marking of Packing Boxes All MiniSKiiP® packing boxes are marked with a sticker label. This label is placed on the packing box as can be seen in Fig. 14.4: Fig. 14.4: Place for label on MiniSKiiP® packing boxes The label contains the following items (seeFig. 14.5) Fig. 14.5: Label of MiniSKiiP® packing boxes 1. SEMIKRON Logo 2. Type designation 3. “Dat. Cd:” Date code – 5 digits: YYMML (L=Lot of same type per week) 4. “Au.-Nr :” Order Confirmation Number / Item Number on Order Confirmation 5. “Menge :” Quantity of MiniSKiiP® modules inside the box – also as bar code 6. “Id.-Nr :” SEMIKRON part number – also as bar code Bar Code due to ? standard: EEC 200 ? Format: 19/9 1. 3. 5. 2. 4. 6. MiniSKiiP® Generation II Technical Explanations 28 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 15 Type Designation System ? ? ? ? ? ? ? SKiiP 1 1 NAB 06 5 V1 ? SKiiP: SEMIKRON integrated intelligent Power ? case number e.g. 1 = housing size 1 ? “current class” number for devices with the same case ? circuit specification (examples) AC = 3 ~ inverter AHB = 3 ~ rectifier, half controlled, brake chopper ANB = 3 ~ rectifier, not controlled, brake chopper NAB = 3 ~ rectifier, brake chopper, 3 ~ inverter ? voltage class 06 = 600 V 12 = 1200 V 17 = 1700 V ? IGBT chip technology 3 = Standard NPT IGBT 5 = Ultra fast NPT IGBT 6 = Fast Trench IGBT T4 = Trench 4 ? V - number (for internal use) 16 Caption of the Figures in the Data Sheets 16.1 Caption of Figures in the Data Sheets of “065”, “066” and “126” Modules For MiniSKiiP® II Generation modules with “065”, “066” and “126” IGBT chip technologies (Ultra fast NPT IGBT and Fast Trench IGBT) the following captures of figures are given in the data sheet: AC-Topologies Fig. 1 Inverter IGBTs: Collector current IC as a function of the collector-emitter voltage VCE (typical output characteristics); Parameters: Gate-emitter voltage VGE, Tj= 25°C, Tj = 125°C or Tj = 150°C Fig. 2 Maximum rated continuous DC collector current IC as a function of the heat sink temperature Ts Fig. 3 Collector current IC as a function of the Gate-emitter-voltage VGE (typical transfer characteristics) Fig. 4 Maximum safe operating area for periodic turn off (RBSOA) at T j = 150°C and VGE =±15V Fig. 5 Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of the collector current IC for inductive load using a suitable RG ; Tj = 125°C Fig. 6 Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of the gate series resistance RG for inductive load using a suitable Ic ; Tj = 125°C Fig. 7 Typical gate charge characteristic: Gate-emitter voltage VGE as a function of the gate charge QG MiniSKiiP® Generation II Technical Explanations 29 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON Fig. 8 Transient thermal impedance Zthjs of one IGBT switch and corresponding inverse diode as function of time Fig. 9 Forward characteristics of an inverse diode. Typical and maximum values at T j = 25°C and Tj = 125°C or Tj = 150°C CIB, ANB and AHB Topologies Fig. 10 Forward characteristics of an input bridge diode. Typical and maximum values at Tj = 25°C and Tj = 125°C or Tj = 150°C AHB-Topologies Fig. 11 Thyristor gate voltage VG against gate current IG (total spread) showing the region of possible (BMZ) and certain (BSZ) triggering for various junction temperatures T j. The voltage and current of triggering pulses have to be in the region of certain triggering (BSZ), but the peak pulse power PG must not exceed that given for the pulse duration tp used. The curve 20 V, 20 ? is the inverter characteristic of an adequate trigger element. 16.2 Caption of Figures in the Data Sheets of “12T4” and “176” Modules For MiniSKiiP® II Generation modules with Trench 3 (176) or Trench 4 (12T4) IGBT chip technologies the following titles of figures are given in the data sheet: AC-Topologies Fig. 1 Inverter IGBTs: Collector current IC as a function of the collector-emitter voltage VCE (typical output characteristics); Parameters: Gate-emitter voltage VGE, Tj = 25°C, Tj = 125°C or Tj = 150°C Fig. 2 Maximum rated continuous DC collector current IC as a function of the heat sink temperature Ts Fig. 3 Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of the collector current IC for inductive load using a suitable RG ; Tj = 125°C or Tj = 150°C Fig. 4 Typical Turn-on and Turn-off energy dissipation Eon and Eoff of one IGBT switch as a function of the gate series resistance RG for inductive load using a suitable Ic ; Tj = 125°C or Tj = 150°C Fig. 5 Collector current IC as a function of the Gate-emitter-voltage VGE (typical transfer characteristics) Fig. 6 Typical gate charge characteristic: Gate-emitter voltage VGE as a function of the gate charge QG Fig. 7 Typical Turn-on and Turn-off switching times (td,on, td,off, tr, tf) as a function of the collector current IC for inductive load using a suitable RG ; Tj = 125°C or Tj = 150°C Fig. 8 Typical Turn-on and Turn-off switching times (td,on, td,off, tr, tf) as a function of the gate series resistance RG for inductive load using a suitable Ic ; Tj = 125°C or Tj = 150°C Fig. 9 Transient thermal impedance Zthjs of one IGBT switch and corresponding inverse diode as function of time Fig. 10 Forward characteristics of an inverse diode. Typical and maximum values at T j = 25°C and Tj = 125°C or Tj = 150°C Fig. 11 Typical peak reverse recovery current IRRM of the inverse diode as a function of the fall rate diF/dt of the forward current with corresponding gate series resistance RG of the IGBT during turn-on Fig. 12 Typical recovery charge Qrr of the inverse diode as a function of the fall rate diF/dt of the forward current (Parameters: forward current IF and gate series resistance RG of the IGBT during turn-on) CIB-Topologies Fig. 12 Forward characteristics of an input bridge diode. Typical and maximum values at Tj = 25°C and Tj = 125°C or Tj = 150°C MiniSKiiP® Generation II Technical Explanations 30 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 16.3 Calculation of max. DC-Current Value for “12T4” IGBTs In the data sheets for MiniSKiiP® IGBT 4 types (“12T4”) the maximum DC-current IC,max is given. Three different considerations lead to limitations of the IC,max: ? Thermal resistance for continuous operation ? Limitation by main terminals ? Chip size and bond configuration 16.4 Internal and External Gate Resistors Inside most of the SEMIKRON modules, IGBT chips are paralleled on the power hybrid to achieve higher currents. Therefore the large IGBT dice contain internal gate resistors to perform acceptable decoupling when paralleled. Fig. 16.1: Two IGBTs with internal gate resistors paralleled In some MiniSKiiP® data sheets the total interal gate resistor is given, which is the equivalent resistance for the paralleled gate resistors on each chip. An example is given in Fig. 16.1 where two IGBT dice are paralleled to one switch of the module with the external power connectors “C” and “E” and the external gate connector “G”. Each chip has his own gate resistor (RGint,1 and RGint,2). The equivalent restistance RGint given in the data sheet is Gint,2Gint,1GintRR11R1?? Assuming that RGint,1 = RGint,2(the same IGBT-type) the data sheet value RGint is half the value of the resistor on a single chip (RGint,1 and RGint,2) in this example: 21Gint,1Gint,1Gint,1Gint,1GintRR21RR11R ???? The external gate resistor values RGon and RGoff given in the data sheets are recommendations from SEMIKRON to achieve smooth swichting behaviour together with low switching losses. Since the switching behaviour strongly depends on the external assembly, the external gate resistors RGon and RGoff have to be tested in the customer application and – if necessary – adjusted. RGint MiniSKiiP® Generation II Technical Explanations 31 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 17 Accessories 17.1 Evaluation Board MiniSKiiP® 2nd Generation The evaluation boards (example Fig. 17.1) are offered to customers for design support to enable a fast and convinient way to connect the MiniSKiiP® with a lab or breadboard circuit. Fig. 17.1: Dynamic Evaluation Board for MiniSKiiP®2 “AC” Types Generic Specification Material : FR4 2 layer board Dimensions : specific to board, see below Thickness : 1.5mm Conductor : 70µm Cu, PbSn plating Mounting : all 4 corners prepared for klipp on feet stand offs, Ø 4mm or therated stand offs, screw Ø 4mm Auxiliary terminals: prepared for use of solder pins, board to wire connectors or board to board connectors. Static board connectors: 5pol single in line, grid dimension 5mm, pin Ø 2mm 7pol single in line, grid dimension 5mm, pin Ø 2mm Dynamic board connectors: 2pol single in line, grid dimension 2.54mm, pin Ø1 mm; 10pol single in line, grid dimension 2.54mm, pin Ø1 mm Main terminals of static and dynamic boards are prepared for use of cable sockets and screws: ? +/- DC connection: Ø 5mm ? Phase out (U,V,W) connection: Ø 4mm. Maximum continious current: Idmax = 30Amp* * limited by the current capability of the narrowest part of the conductor path. Not all evaluation board layouts are suitable for full current rating of the corresponding MiniSKiiP® type New generation boards lead free and with higher current capability are in preparation. MiniSKiiP® Generation II Technical Explanations 32 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 17.1.1 Static Test Boards For static measurements only. This layout is optimized to have the shortest connection between the Terminal and the Chips/Springs. The static test board allows an easy and fast connection to the MiniSKiiP® in a lab circuit to valuate the static values like VCEsat, Vf, Rth, etc. 17.1.2 Dynamic Test Boards The dynamic board layout is optimized for dynamic operation. Therefore a low stray inductance design was realized. The boards allow as well the use of capacitors and resistors for a DC link pre-charge circuit. Recommendation: 2 electrolytic capacitors 330µF / 400V, Ø 30mm 2 resistors 68KO/ 4W, 1 resistor 330O/ 4W Dynamic test boards are for use under application near conditions for breadboard constructions but with limited current. As stated above the dynamic test boards are not designed for use in the final customer product and not for use of max module current. 17.1.3 Order Codes for Test Boards 17.1.3.1 Evaluation Board MiniSKiiP “AC” Type in housing size 0 Static Board IdentNo: 41085315, size: 160 mm x 100 mm Dynamic Board Ident No: 41085310, size: 130 mm x 132 mm 17.1.3.2 Evaluation Board MiniSKiiP “NAC” Type in housing size 0 Static Board Ident No: 41094855, size: 160 mm x 100 mm Dynamic Board Ident No: 41094850, size: 130 mm x 132 mm 17.1.3.3 Evaluation Board MiniSKiiP “NEB” Type in housing size 0 Static Board Ident No: 41094875, size: 160 mm x 100 mm Dynamic Board Ident No: 41094870, size: 130 mm x 132 mm 17.1.3.4 Evaluation Board MiniSKiiP “AC” Type in housing size 1 Static Board Ident No: 41085245, size: 160 mm x 100 mm Dynamic Board Ident No: 41085240, size: 135 mm x 105 mm 17.1.3.5 Evaluation Board MiniSKiiP “NAB” Type in housing size 1 Static Board Ident No: 41085295, size: 160 mm x 100 mm Dynamic Board Ident No: 41085290, size: 125 mm x 135 mm 17.1.3.6 Evaluation Board MiniSKiiP “AC” Type in housing size 2 Static Board Ident No: 41085255, size: 160 mm x 100 mm Dynamic Board Ident No: 41085250, size: 130 mm x 140 mm 17.1.3.7 Evaluation Board MiniSKiiP “NAB” Type in housing size 2 Static Board Ident No: 41085305, size: 160 mm x 100 mm Dynamic Board Ident No: 41085300, size: 130 mm x 140 mm 17.1.3.8 Evaluation Board MiniSKiiP “MLI” Type in housing size 2 Dynamic Board Ident No: 45103600, size: 120 mm x 105 mm 17.1.3.9 Evaluation Board MiniSKiiP “AC” Type in housing size 3 for all IGBT technologies except “12T4” Static Board Ident No: 41085335, size: 160 mm x 100 mm MiniSKiiP® Generation II Technical Explanations 33 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON Dynamic Board Ident No: 41085330, size: 163 mm x 114 mm for IGBT technology “12T4” Dynamic Board Ident No: L5047100, size: 160 mm x 125 mm 17.1.3.10 Evaluation Board MiniSKiiP “NAB” Type in housing size 3 Static Board Ident No: 41085235, size: 160 mm x 100 mm Dynamic Board Ident No: 41085230, size: 163 mm x 114 mm 17.1.3.11 Evaluation Board MiniSKiiP “MLI” Type in housing size 3 Dynamic Board Ident No: 45102900, size: 145 mm x 105 mm 17.1.3.12 Evaluation Board for 1700V MiniSKiiP “ANB” Type in housing size 2 Dynamic Board Ident No: 45114100, size: 176 mm x 131 mm 17.1.3.13 Evaluation Board for 1700V MiniSKiiP “AC” Type in housing size 3 Dynamic Board Ident No: 45117500, size: 176 mm x 131 mm 17.1.3.14 Evaluation Board for 1700V MiniSKiiP “NAB” Type in housing size 2 Dynamic Board Ident No: 45117900, size: 176 mm x 131 mm 17.1.3.15 Evaluation Board for 1700V MiniSKiiP “NAB” Type in housing size 3 Dynamic Board Ident No: 45118100, size: 176 mm x 131 mm Additional boards for special types may be availabe on request. Please contact MiniSKiiP® product manager musamettin.zurnaci@semikron.com. 17.2 Pressure Lid With the introduction of MiniSKiiP 2nd generation, the order procedure for the pressure lids changes. The lids are no longer part of the MiniSKiiP itself. They have to be ordered and booked separately. 17.2.1 Order Codes for Standard Lids The following order codes are worldwide present in the NAVISION system: 25121000 standard lid for MiniSKiiP II housing size 0 25121010 standard lid for MiniSKiiP II housing size 1 25121020 standard lid for MiniSKiiP II housing size 2 25121030 standard lid for MiniSKiiP II housing size 3 17.2.2 Order Codes for Slim Lids The following order codes are worldwide present in the NAVISION system: 25121040 slim lid for MiniSKiiP II housing size 0 25121050 slim lid for MiniSKiiP II housing size 1 25121060 slim lid for MiniSKiiP II housing size 2 25121070 slim lid for MiniSKiiP II housing size 3 17.3 Order Codes for Mechanical Samples The following order codes for Mechanical Samples are worldwide present in the NAVISION system: 25231100 mechanical sample MiniSKiiP II housing size 0 25231110 mechanical sample MiniSKiiP II housing size 1 25231120 mechanical sample MiniSKiiP II housing size 2 25231130 mechanical sample MiniSKiiP II housing size 3 MiniSKiiP® Generation II Technical Explanations 34 / 34 Version 3.4 / 2014-07-08 © by SEMIKRON 18 Disclaimer Important notice: The techinacl data and hardware of the above offered evaluation boards are serving for technical support only. Any warranty is excluded. Technical details may change without notice. No components are included in delivery. All boards will be delivered without Connectors, SMDs, Standoffs etc. All above mentoined components are standard components available at electronic distributors. No components are available from SEMIKRON neither as kits nor as individual parts. The evaluation boards are not suitable to replace final PCBs or for use in customer end-products. Disclaimer: SEMIKRON does not take on any liability for literal mistakes in the above displayed “Technical Information”. The content of the information is according to today’s standards and knowledge and written up with necessary care. A liability for usableness and correctness is excluded. A liability for direct or secondary damages resulting from use of this information is excluded, unless regulated by applicable law. The given examples are not taking in consideration individual cases, therefore a liability is excluded. The content is subject to change without further notice. In addition to that the SEMIKRON terms and condition apply exclusively, valid version displayed under http://www.semikron.com.