Hydrogen (H2) Monitoring Articles

  • Hydrogen ion sensing characteristics of IGZO/Si electrode in EGFET

    In–Ga–Zn–O (IGZO) was widely applied in the substrate of TFT to replace α–Si in recent years. In this study, IGZO layer with thickness of 70 nm is firstly proposed as a pH–sensing membrane directly deposited on P–type Si substrate acting as an extended gate of conventional extended–gate field–effect transistor (EGFET). Post–deposition rapid thermal anneal (RTA) was performed to improve pH sensing ...


    By Inderscience Publishers

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