AJA International, Inc.

AJA InternationalModel ATC Flagship Series -Sputtering Systems

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AJA International ATC Flagship Series Sputtering Systems are versatile PVD coating tools which can be built in a variety of configurations to satisfy most requirements. These systems are built around AJA's unique A300-XP (UHV) or Stiletto Series (HV) magnetron sputtering sources which feature in-situ source head tilting allowing precise and repeatable con-focal, direct, and off-axis thin film deposition. All systems include a heavy duty hoist to lift the chamber top for system access.

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Substrate holders with heating or cooling from 25mm to 300mm Ø are available on these machines. AJA magnetron sputter sources from 1"-12" Ø, plus rectangular, triangular and turret sputter sources can be incorporated. The maximum number of sputter sources will depend on the substrate size, configuration and magnetron sputter source size. For example, the ATC 1800 can be fitted with (5) 2" magnetrons with in-situ tilt. Consult the factory for optimum configuration.  These versatile sputtering systems can be also fitted with other deposition sources (e-beam evaporation, thermal evaporation and PLD) , ion sources, facing target sputtering sources (FTS), contact masking systems, metal-sealed tops, bake jackets, glove boxes, cassettes, auto-loading and analytical tools (RHEED, XPS, Auger, RGA, Ellipsometers and MOS).

LabVIEW based computer control and either turbomolecular or cryopumping are utilized depending on the application. ATC Flagship Systems can also be easily connected to each other or to ATC Orion Systems for multi-chamber (e.g. metal/oxide) or multi-technique (e.g. sputter/e-beam evaporation/thermal evaporation/PLD/ion milling/analytical) configurations.

AJA's exclusive Stiletto (HV) and A300 (UHV) Series Magnetron Sputtering Sources are designed for maximum application flexibility. These unique sources feature a modular magnet array which can be configured by the customer to operate in the nearly-balanced, unbalanced (Type II) and magnetic material modes. Gas injection chimneys and shutter systems are incorporated to facilitate in-situ tilting and prevent cross-contamination and target poisoning. 3" and 4" sources can be operated at pressures below 4 x 10-4Torr in combination with an ion source to perform IBAD at half the price and complexity of an ion beam assisted ion beam sputtering system.

(11) 2” UHV magnetron sputtering sources in confocal arrangement

(6) 3” UHV magnetron sputtering sources in confocal arrangement, (1) 3” sputter source in direct deposition orientation

(5) 4” UHV magnetron sputtering sources in confocal arrangement

Up to (5) 3” UHV magnetron sputtering sources in confocal arrangement, (1) 6” UHV sputter source for direct deposition

(8) 2” UHV magnetron sputtering sources in confocal geometry, (2) custom anti-shorting sputtering sources optimized for chalcogenide materials

Accommodates up to (13) sputtering sources with confocal, direct and off-axis orientation

Direct deposition orientation with combination of 1.5” and 2” UHV magnetron sputtering sources

(11) 2” UHV magnetron sputtering sources in direct deposition orientation with 4cm gridded DC ion source

The ATC Series Thin Film Deposition Systems can be configured for con-focal, direct, and off-axis deposition. Con-focal deposition with in-situ tilt sputter sources (AJA pioneered and developed this concept in 1991) can deliver uniformity of better than +/- 2% on substrates twice the diameter of the targets. Often +/- 1% or better is achievable. A typical deposition profile with SiO2 on a 6" diameter Si wafer is shown.

Deposition rate is a function of sputter yield of the material, maximum allowable power density into the target (depends on heat transfer capability of target material), and type of power used (e.g. RF, DC, pulsed DC).

Maximum deposition rates are achieved with materials such as Au - high sputter yield, excellent heat transfer material and can be sputtered with DC (most efficient). Slow deposition rates can be expected with materials such as Al2O3 - very low sputter yield, poor heat transfer material and must be sputtered with RF (1/2 the efficiency of DC). Typical rates are 0-18 Å/sec with Au, 0-9 Å/sec with Cu and 0-0.16 Å/sec with Al2O3 in a confocal configuration with 2" sources on a 100 mm diameter substrate. Off-axis deposition rates are typically 1-5 times lower than con-focal deposition rates depending on substrate size and system configuration.

Direct deposition at short working distances (50-100 mm) can achieve rates as high as 300 Å/sec but con-focal geometry results in much better uniformity, the ability to co-deposit alloy films and the ability to grow better ultra-thin film multilayers since the substrate is always "in the plasma." The cost of the smaller targets employed in con-focal configurations can also significantly reduce operating cost. The ultimate system configuration offered will always depend on the application.