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AxetrisModel EMIRS 50 -Small and Scalable Broadband Infrared Sources

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Axetris EMIRS50 infrared sources are optimized for miniaturized sensor technology. Like non-dispersive infrared (NDIR) sensors, photoacoustic spectroscopy (PAS) or attenuated total reflection (ATR) spectroscopy. The sources are particularly well-suited to size-optimized and battery-powered sensor solutions in medicine as well as in numerous environmental and industrial applications. Thanks to the low thermal mass of the chip, modulation frequencies of 100 Hz are guaranteed, allowing high sampling rates. The efficient collimation of the available reflectors is achieved by optimized Winston-Cone geometry and mirror-like surfaces. As a result, Axetris EMIRS50 infrared sources offer maximum efficiency.
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  • True black body radiation
  • High modulation depth
  • Low power consumption
  • Long lifetime
  • Typical current at 460°C: 75 mA
  • Typical voltage at 460°C: 2.7 V
  • Broadband emission power: 4.3 mW
  • Package Type: TO-46
  • Broadband window: BaF2
  • Buildup: Reflector 5
  • Emissivity: 0.85 ε
  • IRS Chip: EMIRS50
  • Lifetime: 10 a
  • Max. peak temperature: 500 °C
  • Medium cold resistance: 29 Ω
  • Medium hot resistance: 42 Ω
  • Modulation depth at 20Hz: 0.95
  • Modulation depth at 50Hz: 0.82
  • Sealing type: Back vent
  • Working temperature: 460 °C
  • Country of origin: Switzerland
  • True black body structure
  • Specific form-fit and collimation
  • Optical analyzes for special requirements