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L-OptimaModel Al2O3 -Crystal Substrate

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Have good thermal, electrical, dielectric, corrosion resistant and high temperature properties, and it has also good thermal conductivity, high hardness, infrared transparency and chemical stability and widely used as high-temperature infrared window materials, it is also excellent substrate materials for III-V nitride and some epitaxial Superconducting thin films. CAS No: 1344-28-1. Formula: Al2O3.

  • Crystal structure hexagonal(a=4.758Å,c=12.992Å)
  • Density 3.98g/cm3
  • purity Udoped(99.9999%),lightly doped and heavily doped
  • Dielectric constant ~9.4(300k) at A axis, ~11.58(300k) at C axis
  • Orientation C,R,A,M±0.5o
  • Size 10×10×0.5 mm, 0.5″×0.5″×0.5mm Φ1″×0.5 mm, Φ2″×0.5 mm,Φ3″×0.5 mm
  • Polished One side or double side polished
  • Surface roughness ≤5Å
  • Package 100 clean bags, single or multi-chip wafer box