Model ACE -Atomic Flux Control
kSA ACE provides atomic flux control with accurate and high-resolution source flux and growth rate monitoring for thin-film deposition. The kSA Atomic Control for Epitaxy (ACE) metrology tool is a highly sensitive instrument that measures the in situ flux rate of atomic species using the principle of atomic absorption spectroscopy. The kSA ACE system uses conventional hollow cathode lamps (HCLs) to generate the atomic emission for the elements of interest. It also utilizes a high-sensitivity, UV-optimized solid-state spectrometer to monitor the absorption, along with a second spectrometer to monitor signal drift from the HCLs. Because the technique is inherently material specific, the signal does not respond to other species or radiation in the chamber. kSA ACE can measure each material of interest independently with high accuracy, providing precise material-specific flux control in multi-source deposition processes.
With its high sensitivity and long-term repeatability under continuous operation, kSA ACE has applications in the fabrication of III-V and II-VI compounds, semiconductor devices, thin-film sensors, solar cells, optical coatings, x-ray optics, flat-panel displays, and more.
k-Space designed the kSA ACE using feedback from industry-leading scientists. The system is engineered to operate up to three sources at the same time with exceptional stability. k-Space can design systems to meet your specific needs, with options such as automated alignment drift compensation and motorized auto-alignment correcting light source optics heads. With kSA ACE, you can measure and control:
- Real-time flux transmission/absorption
- Real-time growth rate
- Real-time composition control
The chart shows the absorption of specific atomic lines for In, Ga, and Al over a range of growth rates, following the Beer-Lambert law. The data was taken with a kSA ACE system on a Gen III MBE reactor equipped with atomic absorption ports.
The kSA ACE is ideal for many thin-film deposition processes, including:
- Molecular Beam Epitaxy (MBE)
- Evaporation: Knudsen (effusion) cells, e-beam source, ion-beam assisted, induction source, resistive heat source
- Sputtering: RF/DC magnetron, ion-beam, reactive
- Pulsed laser deposition
- Plasma etch processes
It provides the high sensitivity and stability needed for accurate and high-resolution flux and growth rate monitoring during these processes.
