The Orion Series Sputtering Systems feature a con-focal sputter source flange oriented at specific angles determined from many decades of experience with the in-situ tilt sources found on the flagship ATC systems. The specially designed chimney/ground shield/shutter system allows a high degree of deposition uniformity over substrates more than twice the target diameter. A typical deposition profile with SiO2 on a 4” diameter Si wafer is shown.
Deposition rate is a function of sputter yield of the material, maximum allowable power density into the target (depends on heat transfer capability of target material), and type of power used (e.g. RF, DC, pulsed DC, and HiPIMS).
Maximum deposition rates are achieved with materials such as Au, as this material has a high sputter yield, excellent heat transfer, and can be sputtered with DC (most efficient).
Slow deposition rates can be expected with materials such as Al2O3, as this material has a very low sputter yield, poor heat transfer, and must be sputtered with RF (1/2 the efficiency of DC). Typical rates are 0-18 Å/sec with Au, 0-9 Å/sec with Cu and 0-0.16 Å/sec with Al2O3 in a confocal configuration with 2” sources on a 100 mm Ø substrate.
Direct deposition at short working distances (50-100 mm) can achieve higher rates. However, con-focal geometry results in much better uniformity, the ability to co-deposit alloy films, and the ability to grow better ultra-thin film multilayers, since the substrate is always “in the plasma.” The cost of the smaller targets employed in con-focal configurations can also significantly reduce operating costs.