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Rigaku - Model TXRF 3760 -Surface Contamination Metrology Analyser
Measure elemental contamination at discrete points or with full wafer maps. Total reflection X-ray fluorescence (TXRF) analysis can gauge contamination in all fab processes, including cleaning, litho, etch, ashing, films, etc. The TXRF 3760 can measure elements from Na through U with a single-target, 3-beam X-ray system, and a liquid nitrogen-free detector system.
The TXRF 3760 includes Rigaku`s patented XYθ sample stage system, an in-vacuum wafer robotic transfer system, and new user-friendly Windows software. These contribute to higher throughput, accuracy and precision, and easy routine operation.
Optional Sweeping TXRF software enables mapping the contaminant distribution over the wafer surface to identify "hot spots" that can be automatically re-measured at higher precision.
Optional ZEE-TXRF capability overcomes the historical 15 mm edge exclusion of original TXRF designs, enabling measurements to be made with zero edge exclusion.
High-reliability wafer surface contamination analysis
TXRF is an indispensable tool for materials and device development for semiconductor manufacturing. Remarkable reliability is achieved thanks to newly developed X-ray optics, a new stage mechanism, and a new concept in compact rotating-anode X-ray sources. Also, a new, low-COO TXRF model offers reduced initial and operating costs.
- Ease of operation and rapid analysis results
- Accepts 200 mm and smaller wafers
- Low cost of ownership
- Compact design, footprint
- Sealed X-ray tube source
- Wide range of analytical elements (S~U)
- Application to bare Si and to non-Si substrates
- Zero edge exclusion (ZEE-TXRF) measurement capability
- Import measurement coordinates from defect inspection tools for follow-up analysis
- Technique : Total reflection X-ray fluorescence (TXRF)
- Benefit : Rapid, non-destructive measurement of trace elemental surface contamination (Na – U)
- Technology : Three-beam TXRF system with electronically-cooled detector, and automatic optics exchange
- Attributes : High-power W-anode X-ray source (9 kW rotating anode)
- Three excitation energies optimized for light, transition, and heavy elements
- XYθ sample stage for diffraction avoidance
- In-vacuum wafer robotic transfer system
- Accepts up to 200 mm wafers
- Features : Full wafer mapping (SWEEPING-TXRF)
- Zero edge exclusion (ZEE-TXRF)
- Options : SECS/GEM software
- SMIF handling
- Dimensions : 1000 (W) x 1760 (H) x 948 (D) mm
- Measurement results : Quantitative result, spectrum chart, color contour map, mapping table