Semicorex Advanced Material Technology Co.,Ltd. products
Silicon Carbide Coated - PSS Etching Carrier
Semicorex - Etching Carrier Holder for PSS Etching
Semicorex`s Etching Carrier Holder for PSS Etching is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
Semicorex - PSS Handling Carrier for Wafer Transfer
Semicorex`s PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
Silicon Carbide Coated - ICP Etching Carrier
Semicorex - Coated ICP Component
Semicorex`s SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
Semicorex - High-Temperature Coating for Plasma Etch Chambers
When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex`s High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
Semicorex - ICP Plasma Etching Tray
Semicorex`s ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
Semicorex - TaC Coating
TaC coating graphite is created by coating the surface of a high-purity graphite substrate with a fine layer of tantalum carbide by a proprietary Chemical Vapor Deposition (CVD) process. Tantalum carbide (TaC) is a compound that consists of tantalum and carbon. It has metallic electrical conductivity and an exceptionally high melting point, making it a refractory ceramic material known for its strength, hardness, and heat and wear resistance. The melting point of Tantalum Carbides peaks at about 3880°C depending on purity and has one of the highest melting points among the binary compounds. This makes it an attractive alternative when higher temperature demands exceed performance capabilities used in compound semiconductors epitaxial processes such as MOCVD and LPE.