VIGO Photonics products

The so-called InGaAs material refers to a complete epitaxial stack composed of a variety of layers, with InGaAs forming the key part – the absorption – and being responsible for the material’s optical properties. The InGaAs layer itself is a III-V semiconductor that belongs to the family of In(x)Ga(1-x)As(y)P(1-y). For binary GaAs, InP, GaP, or InAs, the x and y are set to 0 or 1. In quaternary InGaAsP and ternary InGaAs a variety of x and y values are possible, and each combination will tune the semiconductor to different applications.

SM-I-12 is an ultra-small IR detection module. Thermoelectrically cooled, optically immersed photoconductive detector, based on HgCdTe heterostructure (PCI-3TE-12-1×1-TO8-wZnSeAR-36) is integrated with transimpedance, AC coupled preamplifier. There is a possibility to manually adjust gain of the signal. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects. SM-I-12 is easy to assembly in space limited measuring systems of FTIR applications.