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Angstrom Engineering Inc.
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Angstrom Engineering - Model LPCVD - ...

Angstrom Engineering - Model LPCVD -Low Pressure Chemical Vapor Deposition System

We engineered a water-cooled furnace that can reach 1100°C in 10 minutes and cool down below 800°C in a mere 2 minutes. Controlled graphene growth is ensured, and the Low-Pressure Chemical Vapor Deposition system keeps processing times to a minimum. Various chamber tube sizes are available between Ø 2 in and Ø 8 in, allowing the processing of single small samples up to batches in 6-inch wafers.

Reactor

Ø 50 mm-Ø 200 mm quartz tube chamber
Interchangeable Quartz tubes of various sizes as required
Accommodates Individual or multiple substrates up to 150 mm x 150 mm
Upstream end flange with quick connections to gas manifold
Downstream end flange with quick connections to pumping and gauging

Temperature/Pressure Control

The Low Pressure Chemical Vapor Deposition system features a single-zone quartz lamp furnace with a 6-inch uniform temperature zone
Auto-tuning feature provides very stable temperature control
Rapid heating to 1100°C in 10 minutes
Rapid cooling from 1100°C to 800°C in 2 minutes
Downstream pressure control 100mTorr to 500Torr using a throttling VAT butterfly valve
Up to 12 mass flow controllers

Operation & Safety

Safety circuit (hardware and software)
Flammable gas sensor (H2)
Enclosed frame and safety guarding
PC / PLC controller including Windows-based recipe and control software
Editable recipes, data logging, and password-protected access control

Angstrom Engineering - Model LPCVD -Low Pressure Chemical Vapor Deposition System

Process Specific Advantages

Reactor

Temperature/Pressure Control

Operation & Safety