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NANOCHEM - Model ASX-II™ -Arsine Gas Purifiers
The increasing demands for higher yields and more consistent performance in the fabrication of III-V compound semiconductor devices dictate the need for more stringent contamination control. Nowhere is this more evident than in III-V compound semiconductor epitaxy processes. Gas contaminants, especially moisture and oxygen-containing species, adversely affect film quality and reduce yields. Since contamination sources cannot be entirely eliminated, the most effective solution is to purify arsine as close to the point-of-use as possible with an effective and efficient purification medium. ASX-II is a new inorganic purification medium that removes H2O and is expected to remove Oxy-acid impurities. ASX-II offers the highest lifetimes for the removal of moisture. ASX-II has a wide range of applications, including GaAs and InGaAsP MOCVD processes, and is available in a wide range of purifier sizes: from Point-of-Use to Proximate
- Direct purification of AsH3 used in ultra-high purity applications
- Ideal for GaAs and InGaAsP processes
- Highest moisture capacity
- No pressure build-up
- Best impurity removal efficiencies
- Removes: H2O and is expected to remove other oxygenated species
- Minimizes fluctuations in volatile impurities as cylinder is depleted
- Minimizes cylinder-to-cylinder impurity variations
- Improves process yields & device quality
- Increased savings by using cylinder longer before change out
- No external power source required
- No heating or cooling required
Specifications
- < 75 ppb H2O (LDL) in AsH3 by MAH-2
Typical Performance
Impurities are typically removed to the detection limits of state-ofthe-art analytical techniques:
Capacity & Efficiency in AsH3
ASX-II offers the highest lifetime and the best efficiency for the removal of moisture in arsine.
Reduced Cost of Operation
By increasing the amount of arsine that can be consumed in each cylinder before a changeout, ASX-II enables significant raw material savings.