Automatic, Accelerated, Reliability Test System

DC-18GHz, 60W RF device lifetest, includes stress and measurement: Stress temperature range: 50 °C to > 250 °C, stability of +/- 2 °C, Advanced multi-dimensional dynamic lifttest algorithm, 32 RF Devices with individual DC Bias control, independent RF power level, and independent thermal control, Embedded third-party parametric analyzer, custom characterization and benchmarking, Simple user interface, collect and export data in raw or graphic. Idea for SiGe, GaAs, InP, GaN, SiC material RF device.