Hiden - Model IG20 - 5keV -Argon or Oxygen Ion Source for UHV Surface Analysis

The IG20 is designed as primary ion beam for SIMS, Auger and XPS applications for imaging and depth profiling, however, the internally generated raster scan and wide range of operating parameters make it suitable for sample cleaning and surface science experiments. Twin user switchable filaments ensure continued operation in the case of a blown filament – which may be replaced at the user’s convenience.

• Intense ion beam with 100 µm spot size and energies from 0.5 – 5 keV
• High current density, up to 4.5 mA/cm2
• Electron impact ion source with Argon and Oxygen capability
• Steering optics for line scattering and beam rastering in depth profiling
• 3° offset in the ion gun column for optimum rejection of neutrals
• Beam blanking facility for rapid beam switching in rastering applications
• Source differential pumping for reduced chamber gas load
• Easily replaceable twin filament assembly
• Sweep rates down to 64 µs
• Integrated operation with SIM and EQS probes for direct raster rate / area control

• Controlled via a windows PC based interface, which handles thermal management of the source, the gun is easy and reproducible to set up and can be configured for high current or small spot applications.
• Diagnostic modes are instantly available with beam parameters (current and beam shape) measured on an electron suppressed Faraday collector and displayed live on the PC.
• Drivers for LabVIEW are also available to permit OEM integration into other systems.

• Surface analysis
• Thin film & surface engineering
• Surface science
• Nanotechnology
• Auger electron spectroscopy
• Ion beam sputtering
• Rastering depth profiling

An intense ion source for argon, oxygen, and inert gas capabilities

Designed primarily for oxygen compatibility, the Hiden IG20 is a high-performance electron impact ion source with a high current density for an intense spot of just 100 micrometres (µm) in diameter. Browse the table below for full specifications:

• Primary ion: Oxygen, Argon, Xenon
• Ion energy: 0.5 to 5 KeV
• Minimum spot size (elemental mapping): 50 micrometers
• Minimum spot size (depth profiling): 100 micrometers
• Deflection field for mapping: +/- 4 millimeters
• Ion beam current: 1.0 to 800 nanoamperes
• Typical fast etch rate- Si (5 KeV Ar 600nA): 50 nanometers per second, 450um X 650um crater