Logo Environmental XPRT
Companies
Products
Services
Software
Training
Applications
Sign in
List your business
Angstrom Engineering Inc.
About
  2. Companies
  3. Angstrom Engineering Inc.
  4. Products
  5. Angstrom Engineering - Model Perovskite ...

Angstrom Engineering - Model Perovskite Series -Ion Beam Sputter Deposition (iBSD) Systems

SHARE

Our Reticle ion beam sputter deposition systems are designed and engineered to create precise optical films of the highest purity, density, and stability. Angstrom Engineering’s Reticle® systems provide a turn-key solution for those looking to realize any optical design into a high-performance film.

Most popular related searches
water cooling
vacuum pump
sputtering system
optical filter
optical monitoring
ICP
water optimization
magnetic pump
cooling water
laser optical

This is an ideal system for applications such as antireflective (AR) coatings, highly reflective (HR) coatings, coatings for laser diode bars, telecom optical filters, and vanadium oxide deposition.

Angstrom Engineering designs and engineers each Reticle® platform to provide our partners in the optics community the ability to create the films they need with excellent purity, density, and uniformity, all in a highly repeatable and automated fashion.

Reticle employs Ion Beam Sputter Deposition (IBSD), in which a focused beam of highly energetic ions is accelerated toward a target comprising the material to be deposited. Thoughtful design of the ion beam focusing optics confines the beam entirely to the area of the target, eliminating any risk of contamination. 

  • The IBSD process creates a highly energetic flux of deposition material, leading to films with improved density, hardness, and surface roughness compared to those deposited by evaporation processes.
  • IBSD takes place in a high vacuum environment, minimizing noble gas inclusion in the deposited film and improving the environmental stability of the coating.
  • IBSD processes can also employ a secondary ion source for substrate cleaning and energetic assist, substrate heating for reactive deposition, and in-situ optical monitoring or ellipsometry for critical layer thickness termination. 

Secondary Ion Source

  • All standard Reticle® platforms include an additional gridless end-Hall ion source with hollow cathode neutralizer.
  • The end-Hall source is optimized for substrate cleaning/etching, ion-assisted deposition, or reactive IBSD processes.
  • For processes that require deep substrate etching, a selection of gridded DC or RF-ICP ion sources is also available.

Target Carousel

  • The deposition ion source is directed toward a material target which has been optimized in both size and position for the required deposition geometry.
  • Targets are water-cooled for improved process stability and continuously rotate to prevent beam texturing. For multi-layer depositions, the carousel can be automatically indexed between targets, with up to 8 positions available.
  • Target rotation and carousel indexing each have torque sense, preventing any process problems due to slips or jams in rotation.

Vacuum Environment

  • Reticle® can be configured for both high and ultra-high vacuum environments.
  • High-speed, magnetically levitated turbomolecular pumps serve as the primary high vacuum pump.
  • An optional cryogenic pump improves base pressure and pumping speed and can be isolated from the chamber during reactive processes with oxygen.
  • Low-profile chamber bake-out heaters remove moisture from the chamber walls and shielding, improving base pressure and overall process stability.

Deposition Ion Source

Reticle® employs a selection of gridded RF-ICP ion sources for high-energy deposition.
  • Available sources include 4, 10, 14, and 22 cm grid configurations with ion energies up to 1200 eV and beam currents greater than 1000 mA.
  • Self-aligned ion optics are configured specifically for the desired deposition requirements and geometry of your process.
  • A low-frequency neutralizer ensures stable beam operation without contamination from a traditional filament.
  • Operation of the RF-ICP source is handled by Aeres®, combining the power of full process flexibility with the ease of one-touch, automated recipe control.

Secondary Ion Source

  • All standard Reticle® platforms include an additional gridless end-Hall ion source with hollow cathode neutralizer.
  • The end-Hall source is optimized for substrate cleaning/etching, ion-assisted deposition, or reactive IBSD processes.
  • For processes that require deep substrate etching, a selection of gridded DC or RF-ICP ion sources is also available.

Target Carousel

  • The deposition ion source is directed toward a material target which has been optimized in both size and position for the required deposition geometry.
  • Targets are water-cooled for improved process stability and continuously rotate to prevent beam texturing. For multi-layer depositions, the carousel can be automatically indexed between targets, with up to 8 positions available.
  • Target rotation and carousel indexing each have torque sense, preventing any process problems due to slips or jams in rotation.

Vacuum Environment

  • Reticle® can be configured for both high and ultra-high vacuum environments.
  • High-speed, magnetically levitated turbomolecular pumps serve as the primary high vacuum pump.
  • An optional cryogenic pump improves base pressure and pumping speed and can be isolated from the chamber during reactive processes with oxygen.
  • Low-profile chamber bake-out heaters remove moisture from the chamber walls and shielding, improving base pressure and overall process stability.

Deposition Ion Source

Reticle® employs a selection of gridded RF-ICP ion sources for high-energy deposition.
  • Available sources include 4, 10, 14, and 22 cm grid configurations with ion energies up to 1200 eV and beam currents greater than 1000 mA.
  • Self-aligned ion optics are configured specifically for the desired deposition requirements and geometry of your process.
  • A low-frequency neutralizer ensures stable beam operation without contamination from a traditional filament.
  • Operation of the RF-ICP source is handled by Aeres®, combining the power of full process flexibility with the ease of one-touch, automated recipe control.

Secondary Ion Source

  • All standard Reticle platforms include an additional gridless end-Hall ion source with hollow cathode neutralizer.
  • The end-Hall source is optimized for substrate cleaning/etching, ion-assisted deposition, or reactive IBSD processes.
  • For processes that require deep substrate etching, a selection of gridded DC or RF-ICP ion sources is also available.