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Amptek - Model FAST SDD -Ultra High Performance Silicon Drift Detector
Amptek recently brought silicon wafer manufacturing in-house and improved the process. The result is a detector with lower noise, lower leakage current, better charge collection, and uniformity from detector to detector. This makes it the best performing silicon drift detector available and the true state-of-the-art. The FAST SDD represents Amptek’s highest performance silicon drift detector (SDD), capable of count rates over 1,000,000 CPS (counts per second) while maintaining excellent resolution. The FAST SDD® is also available with our Patented C-Series (Si3N4) low energy windows for soft x-ray analysis.
Unlike our conventional SDDs which use a junction gate field-effect transistor (JFET) inside the hermetically sealed TO-8 package, along with an external preamplifier, the FAST SDD uses a complementary metal-oxide-semiconductor (CMOS) preamplifier inside the TO-8 package, and replaces the JFET with a metal-oxide-semiconductor field-effect transistor (MOSFET). This significantly reduces capacitance, providing much lower series noise and yielding improved resolution at very short peaking times. The FAST SDD® uses the same detector but with a preamplifier giving lower noise at short peaking times. Improved (lower) resolution enables isolation/separation of fluorescent X-rays with close energy values where peaks would otherwise overlap, permitting users better identification all of the elements in their sample(s). Short peaking times also yield significant improvements in count rates; more counts provide better statistics.
- Lower noise → Better resolution down to 122 eV FWHM
- Lower leakage current → Higher temperature operation (save battery life)
- Better charge collection → Better photopeak shape (no tailing)
- Quality → Detectors have consistent performance allowing for easier calibrations
- Different detector sizes are also available.
- 25 mm² active area collimated to 17 mm²
- 70 mm² active area collimated to 50 mm² - Click for 70mm2 details
- Resolution of 122 eV FWHM at 5.9 keV
- Count rates > 1,000,000 CPS
- High peak-to-background ratio – 26,000/1
- Windows: Be (0.5 mil) 12.5 µm, Be (0.3 mil) 8 µm, or Patented C-Series (Si3N4)
- Radiation hard
- Detector thicknesses
- 500 µm
- 1000 um now available - click for 1mm thick details
- <35 ns for 500um thick detector
- <60 ns for 1000um thick detector
- TO-8 Package
- Cooling ΔT>85 K
- Internal Multilayer Collimator
- Ultra-fast benchtop and handheld XRF analyzers
- Scanning/mapping of samples in an SEM as part of an EDS system
- On-line process control
- X-Ray Sorting Machines
- Space and Astronomy
- OEM