LayTec EpiCurve - Model TT -Wafer Curvature Measurements System
To overcome the challenges that occur with larger wafers (4`, 6` or 8`), you need the advanced EpiCurve® TT system. It combines wafer curvature measurements with all the features of the EpiTT: emissivity-corrected pyrometry and growth rate/thickness measurements by three-wavelength reflectance. This tool will help you avoid cracks, achieve flat wafers and control temperature homogeneity. Every curvature tool can be equipped with Advanced Resolution (AR) curvature measurements for wafer bow asphericity control (EpiCurve® TT AR).
LayTec offers combinations of EpiCurve TT with the products of the EpiTT family: EpiCurveTwin TT has a total of two EpiTT heads and EpiCurveTriple TT has three EpiTT optical heads to measure temperature and reflectance at independent positions.
When it comes to bowed IR transparent substrates like sapphire or SiC, a conventional infrared (IR) pyrometer can measure only the pocket temperature. LayTec`s Pyro 400 directly measures surface temperature of GaN on sapphire and of SiC and enables direct temperature control of InGaN MQW layers.…
For precise temperature measurements throughout the whole fab, we offer the unique temperature calibration tool AbsoluT. It will help you set up exactly the same absolute temperature reference point for pyrometry measurements on different rings and in different reactors and runs. ...more
All LayTec in-situ systems are equipped with LayTec software specially developed for process optimization, analysis and control. Our software solutions can be integrated into the whole fab to monitor all runs simultaneously and support operators making “stop or go” decisions. ... more
Each product in the EpiCurve® TT family is available for all MOCVD growth systems, such as- systems with satellite rotation, showerhead-like systems, R&D type and customized MOCVD growth systems and others. For details please download the EpiCurve® TT datasheet
LayTec’s sensors are adaptable to many MBE systems by Riber, Veeco, DCA and VG. Adaptation to other manufacturers’ products and custom-built systems is available on request. To learn more please download our Application Note: EpiCurve® TT for MBE
o see LayTec in-situ metrology live, you can watch a video that we have taken at a customer site. In a short lab tour at FBH Berlin in Germany you will see how EpiCurve® TT and EpiRAS TT monitor LED and laser growth and help optimize the processes. ... more
Fields of application
- GaN LED and laser diode production
- III-Nitride growth on silicon
- GaAs/AlGaInP/InP laser diode production
- Triple-junction solar cell production on GaAs, Ge, Si
- SiC for power electronics
- R&D for new materials and devices
- Wafer-selective curvature measurements in the curvature range from -7000 km-1 (convex) to +800 km-1 (concave)
- Versions with a blue laser provide measurements on double-sided polished and patterned substrates
- Aspherical bowing curvature measurements with an Advanced Resolution (AR) option
Emissivity Corrected Pyrometry:
- Temperature range: T = 450°C to 1300°C for large viewport systems / T = 500°C to 1400°C for narrow viewport systems / other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC
- Accuracy better than 1 K
- Wafer and area selective measurements
- True wafer temperature for opaque semiconductors such as InP, Graphite (SbS)
- Pocket temperature for GaN, Sapphire and SiC
Reflectance at three wavelengths:
- 950 nm, 633 nm and 405 nm
- growth rate, layer thickness, roughness and other layer qualities