Most SiC substrate producers use a crucible design that involves a porous graphite cylinder for the hot field process. The process involves placing high-purity SiC particles between the graphite crucible wall and the porous graphite cylinder while deepening the crucible and increasing its diameter. This increases the evaporation area of the feedstock while also increasing the charge volume.
Semicorex Porous Graphite Materials are designed to meet the exacting demands of SiC crystal growth applications. Engineered with precision and crafted for performance, these materials are your key to achieving superior SiC crystals with unmatched quality and purity.
